欢迎访问ic37.com |
会员登录 免费注册
发布采购

AO3400A 参数 Datasheet PDF下载

AO3400A图片预览
型号: AO3400A
PDF下载: 下载PDF文件 查看货源
内容描述: N沟道增强型网络场效晶体管 [N-Channel Enhancement Mode Field Effect Transistor]
分类和应用: 晶体晶体管
文件页数/大小: 4 页 / 151 K
品牌: ALPHA [ ALPHA INDUSTRIES ]
 浏览型号AO3400A的Datasheet PDF文件第1页浏览型号AO3400A的Datasheet PDF文件第2页浏览型号AO3400A的Datasheet PDF文件第3页  
AO3400A
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
5
4
V
GS
(Volts)
3
2
V
DS
=15V
I
D
=5.7A
Capacitance (pF)
1500
1200
C
iss
900
0.7
600
300
0
0
V
GS
=10V, I
D
=8.5A
1
25
1
20
30
23
C
oss
34.5
1 uA
5
100 nA
1.5
24
36
29
45
30
V
GS
=4.5V, I
D
=8.5A
0
0
2
4
6
C
rss
V
GS
=2.5V, I
D
=5A
V
DS
8
=5V, I
D
10
=11A
12
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
Maximum Body-Diode Continuous Current
100.00
R
DS(ON)
limited
10µs
30
Power (W)
100µs
1ms
26
15
20
25
V
DS
0.72
(Volts)
1
Figure 8: Capacitance Characteristics
4.5
5
10
40
10.00
I
D
(Amps)
900
88
65
0.95
1100
T
J(Max)
=150°C
1.5
T
A
=25°C
Q
g
1.00
V
GS
=10V, V
DS
=15V, I
D
=8.5A
20
10ms
0.10
T
J(Max)
=150°C
T
A
=25°C
0.1
V
GS
=10V, V
DS
=15V, R
L
=1.8Ω, R
GEN
=3Ω
DC
100ms
10
10s
0
0.001
0.01
0.01
1
10
100
I
F
=8.5A, dI/dt=100A/µs
V
DS
(Volts)
0.01
F
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
I =8.5A, dI/dt=100A/µs
Figure 10: Single Pulse
8
Power Rating Junction-to-
Ambient (Note E)
10
1.8
3.75
3.2
3.5
21.5
2.7
0.1
1
16.8
(s)
Pulse Width
10
100
10
Z
θJA
Normalized Transient
Thermal Resistance
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
θJA
.R
θJA
R
θJA
=125°C/W
8.5
0.0
In descending order
40
A
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
#DIV/0!
1
P
D
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
0.1
T
on
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
Single Pulse
T
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com