欢迎访问ic37.com |
会员登录 免费注册
发布采购

AO3400A 参数 Datasheet PDF下载

AO3400A图片预览
型号: AO3400A
PDF下载: 下载PDF文件 查看货源
内容描述: N沟道增强型网络场效晶体管 [N-Channel Enhancement Mode Field Effect Transistor]
分类和应用: 晶体晶体管
文件页数/大小: 4 页 / 151 K
品牌: ALPHA [ ALPHA INDUSTRIES ]
 浏览型号AO3400A的Datasheet PDF文件第1页浏览型号AO3400A的Datasheet PDF文件第2页浏览型号AO3400A的Datasheet PDF文件第4页  
AO3400A
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
40
35
30
25
I
D
(A)
20
15
10
5
0
0
1
2
V
GS
=2V
2.5V
I
D
(A)
10V
4.5V
3V
20
V
DS
=5V
16
12
0.7
8
125°C
V
GS
=10V, I
D
=8.5A
V
GS
=4.5V, I
D
=8.5A
5
25
1
1 uA
5
100 nA
1.5
25°C
24
36.0
29.0
4
20
30.0
23
34.5
0
0.5
1
1.5
V
GS
=2.5V, I
D
=5A
V
DS
=5V, I
D
=11A
3
4
0
45
2
2.5
Maximum
1: On-Region Characteristics
Current
Figure
Body-Diode Continuous
60
50
R
DS(ON)
(m
)
45
40
35
30
25
20
15
0
5
V
GS
=4.5V
Normalized On-Resistance
55
1.8
V
DS
(Volts)
V
GS
(Volts)
Figure 2: Transfer Characteristics
26
0.72
1
4.5
3
1.5
900
1100
88
65
I
D
=5A
0.95
=4.5V
1.5
V
GS
10
1.8
3.75
3.2
3.5
21.5
2.7
50 75
16.8
V
GS
=10V
I
D
=5.7A
Q
g
V
GS
=2.5V
V
GS
=10V, V
DS
=15V, I
D
=8.5A
1.2
V
GS
=10V, V
DS
=15V, R
L
=1.8Ω, R
GEN
=3Ω
0.9
V
GS
=10V
10
0.6
15
20
-50
-25
0
25
I
D
(A)
I
F
=8.5A, dI/dt=100A/µs
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
60
I
D
=5.7A
50
R
DS(ON)
(m
)
40
I
F
=8.5A, dI/dt=100A/µs
100 125 150 175
Temperature (°C)
8
Figure 4: On-Resistance vs. Junction
Temperature
0.0
1.0E+00
40
#DIV/0!
1.0E-01
1.0E-02
I
S
(A)
8.5
1.0E+01
A
125°C
125°C
1.0E-03
30
25°C
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
1.0E-04
COMPONENTS IN LIFE SUPPORT DEVICES25°CSYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OR
20
1.0E-05
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
10
0
2
4
6
8
1.0E-06
10
0.0
0.2
0.4
0.6
0.8
1.0
V
SD
(Volts)
Figure 6: Body-Diode Characteristics
V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com