AO3400A
N-Channel Enhancement Mode Field Effect Transistor
General Description
The AO3400A uses advanced trench technology to
provide excellent R
DS(ON)
and low gate charge. This
device is suitable for use as a load switch or in PWM
applications.
Standard Product AO3400A is
Pb-free (meets ROHS & Sony 259 specifications).
Features
Features
V
DS
(V) ==30V
V
DS
(V) 30V
I
DD
==11A (V
GS
==10V)
I 5.7A (V
GS
10V)
R
DS(ON)
< 26.5mΩ (V
GS
= 10V)
R
DS(ON)
< 14.5mΩ (V
GS
= 10V)
R
DS(ON)
<<32mΩ (V
GS
==4.5V)
R
DS(ON)
18mΩ (V
GS
4.5V)
R
DS(ON)
< 48mΩ (V
GS
= 2.5V)
Rg,Ciss,Coss,Crss Tested
TO-236
(SOT-23)
Top View
G
D
S
G
D
S
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Symbol
Parameter
V
DS
Drain-Source Voltage
V
GS
Gate-Source Voltage
Continuous Drain
Current
AF
Pulsed Drain Current
B
T
A
=25°C
Power Dissipation
T
A
=70°C
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A
Maximum Junction-to-Lead
C
T
A
=25°C
T
A
=70°C
I
D
I
DM
P
D
T
J
, T
STG
Maximum
30
±12
5.7
4.7
25
1.4
0.9
-55 to 150
Units
V
V
A
A
W
°C
Symbol
t
≤
10s
Steady-State
Steady-State
R
θJA
R
θJL
Typ
70
100
63
Max
90
125
80
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
ALPHA [ ALPHA INDUSTRIES ]
