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AMG-DF102 参数 Datasheet PDF下载

AMG-DF102图片预览
型号: AMG-DF102
PDF下载: 下载PDF文件 查看货源
内容描述: 全桥MOSFET / IGBT驱动高达600V [Full Bridge MOSFET/IGBT Driver up to 600V]
分类和应用: 双极性晶体管驱动
文件页数/大小: 12 页 / 566 K
品牌: ALPHA-MICRO [ ALPHA MICROELECTRONICS GMBH ]
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AMG-DF102  
Full Bridge MOSFET/IGBT Driver up to 600V  
9.2. DC Characteristics  
DC characteristics contain the spread of values guaranteed within the specified supply voltage  
and temperature range and the technology process parameter range unless otherwise  
specified.  
Typical values are valid at VCC = VDD =15V, VBX-VSX =15V, ENQ=Low, TJ = 25°C unless stated.  
#
Symbol Parameter  
IQCC Quiescent VCC supply current  
Conditions Min Typ Max  
Unit  
1
0.8  
2
1.4  
2.5  
0.6  
1.6  
mA  
INX=open  
INX=open  
INX=open  
INX=open  
INX=open  
INX=open  
2
3
4
5
6
mA  
mA  
mA  
V
IQDD  
Quiescent VDD supply current  
0.4  
0.9  
IQBH  
Quiescent VBH supply current  
IQBX  
Quiescent VBX supply current  
tbd 11.6 tbd  
VCCUV+  
VCCUV-  
Rising VCC supply undervoltage threshold  
Falling VCC supply undervoltage threshold  
tbd 10.  
8
tbd  
-
V
7
200 tbd  
150 tbd  
mA  
mA  
IO-  
Output Low short circuit pulsed current  
VO=12V  
tPW<1µs,  
TJ =25°C  
8
-
IO+  
Output High short circuit pulsed current  
VO=0V  
tPW<1µs,  
TJ =25°C  
9.3. Logic Characteristics  
#
1
2
3
4
Symbol Parameter  
Conditions  
Min  
Typ  
Max Unit  
-
9.0  
-
4.5  
5.5  
-
V
V
VINL  
VINH  
IINH  
Low input voltage (INB, IN1, IN2)  
10.0  
20  
-
High input voltage (INB, IN1, IN2,)  
High input bias current (pull-down)  
Low input bias current (pull-down)  
60  
1
µA  
µA  
-
IINL  
VIN=0.1V  
AMG-DF102  
Revision: AB  
30. Nov. 2010  
© All rights reserved  
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