AMG-DF102
Full Bridge MOSFET/IGBT Driver up to 600V
8. Absolute Maximum Ratings
The maximum ratings may not under any circumstances be exceeded, TA = -25°C bis 85°C
#
1
2
3
4
5
6
7
8
9
Symbol
VCC
Parameter
Min
-0.3
Max
18
Unit
V
Logic supply voltage
VDD
Low side driver supply voltage
High side floating supply voltage
High side floating supply offset voltage
High side floating output voltage
Logic input voltage (IN1, IN2, INB)
Input voltage Enable (ENQ)
-0.3
18
V
VBx
-0.3
618
V
VSx
VBX - 181
VSX –0.3
-0.3
VBX + 0.3
VBX + 0.3
VCC+0.3
VCC+0.3
150
V
VOH
V
VINX
V
VENQ
-0.3
V
2
TJ
Junction Temperature
-25
°C
°C
K/W
V
T
stg
Storage temperature range
-55
150
10 Rthja
Thermal resistance junction to ambient
ESD (acc. HMB), pins IN1, IN2, INB and ENQ
ESD (according to HMB), all other pins
80
3
11 VESD
-500
500
4
12 VESD
-1000
1000
V
9. Electrical Characteristics
9.1. Operational Range
#
Symbol Parameter
Min
Max
Unit
1
VSX +12
VSX +15
V
VBx
VSx
VDD
VCC
fs
Absolute high side supply voltage
2
3
4
5
6
7
8
9
400
15
V
V
High side floating supply offset voltage
Low side driver supply voltage
Logic supply voltage
12
12
15
V
120
KHz
V
Switching frequency
VGND
VGND
1
VGND + VCC
VGND + VCC
VINX
VENQ
tpw
Logic input voltage ( INB, IN1, IN2, pull-down)
Enable input voltage (ENQ, pull-up)
High side pulse width (PWM)
Ambient temperature
V
µs
°C
-25
85
TA
1 The suffix x is a replacement for a respective 1, 2 or B
2 TJ = Rthja * Ptot + TA
3 HBM for Inputs only
4 HBM for Inputs only
AMG-DF102
Revision: AB
30. Nov. 2010
© All rights reserved
Page 8 of 12
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