AMG-DF102
Full Bridge MOSFET/IGBT Driver up to 600V
3.1. Example Application Drawing
400V
VS
IH
VBH
HOH
INB
IN1
IN2
IN1
IN2
VSH
VB1
H01
VS1
L01
LOAD
VB2
H02
VS2
L02
GND
GND
Figure 1: Please insert a clear example application drawing here.
3.2. Application Notes
Transistors, bootstrap diodes and caps physically need to be placed as close as possible to
the IC. Via's and 90º trace curves should be avoided. For best performance the distance
between the transistors, bootstrap diodes and caps - and the IC should be kept under 1cm,
traces to the transistors should be straight and min. 1mm wide, if needed only 45º trace
curves. Bootstrap diodes need to be fast switching diodes. Bootstrap capacitors need to have
low ESR. Traces to/from the bootstrap diodes and caps should be min. 1mm wide, as short as
possible and only 45º curves used.
Additional information may be found in Application Note: AMG-AN-DF102
AMG-DF102
Revision: AB
30. Nov. 2010
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