MGA-62563 Electrical Specifications
Rbias=240ohm
T
C
= 25°C, Z
O
= 50Ω, V
d
= 3V (unless otherwise specified)
Symbol
Id
[1,2]
NF
test [1,2]
G
test [1,2]
OIP3
test [1,2]
OIP3
50Ω[3]
Parameters and Test Conditions
Device Current
Noise Figure in test circuit
[1]
Associated Gain in test circuit
[1]
Ouput 3
rd
Order Intercept in test circuit
[1]
Output 3
rd
Order Intercept Point in 50Ω system
Freq
Units
mA
Min.
47
Typ.
62
0.93
Max. Std Dev
77
1.4
23.4
2.09
0.06
0.36
0.51
f = 0.5 GHz
f = 0.5 GHz
f = 0.5 GHz
f = 0.1 GHz
f = 0.2 GHz
f = 0.5 GHz
f = 1.0 GHz
f = 1.5 GHz
f = 2.0 GHz
f = 2.5 GHz
f = 3.0 GHz
f = 0.1 GHz
f = 0.2 GHz
f =0.5 GHz
f = 1.0 GHz
f = 1.5 GHz
f = 2.0 GHz
f = 2.5 GHz
f = 3.0 GHz
dB
dB
dBm
dBm
20.4
30
22
32.9
34.7
34.7
34.8
33.5
33
32.3
32
31
18
18
18
17.6
17.6
17.7
17.9
17.7
0.51
P1dB
50Ω[3]
Output Power at 1dB Gain Compression in 50Ω system
dBm
Notes:
1. Guaranteed specifications are 100% tested in the production test circuit as shown in Figure 1, the typical value is based on measurement of at least
500 parts from three non-consecutive wafer lots during initial characterization of this product.
2. Circuit achieved a trade-off between optimal NF, Gain, OIP3 and input return loss.
3. Parameter quoted at 50Ω is based on measurement of selected typical parts tested on a 50Ω input and output test fixture.
4
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