ATF-35143 Typical Performance Curves,
continued
1.50
1.25
20
1.00
25
5 mA
15 mA
30 mA
F
min
(dB)
F
min
(dB)
5 mA
15 mA
30 mA
0.75
0.50
15
10
0.25
0
0
2
4
6
8
5
10
0
2
4
6
8
10
FREQUENCY (GHz)
FREQUENCY (GHz)
Figure 12. F
min
vs. Frequency and
Current at 2V.
22
1.0
Figure 13. Associated Gain vs.
Frequency and Current at 2V.
25
20
0.8
G
a
(dB)
NF (dB)
18
25°C
-40°C
85°C
0.6
OIP3, P
1dB
(dBm)
20
15
25°C
-40°C
85°C
16
0.4
14
0.2
10
12
0
2
4
6
8
FREQUENCY (GHz)
0
5
0
2
4
6
8
FREQUENCY (GHz)
Figure 14. F
min
and G
a
vs. Frequency
and Temperature, V
DS
= 2V, I
DS
=15 mA.
25
2.5
Figure 15. OIP3 and P
1dB
vs. Frequency
and Temperature
[1,2]
, V
DS
=2 V, I
DS
=15mA.
25
3
2.5
2
1.5
1
P
1dB
OIP3
Gain
NF
OIP3, P
1dB
(dBm), Gain (dB)
OIP3, P
1dB
(dBm), Gain (dB)
20
2
20
15
10
5
0
-5
0
20
40
I
DS
(mA)
60
10
P
1dB
OIP3
Gain
NF
1
5
0.5
NF (dB)
0.5
0
80
0
0
20
40
I
DS
(mA)
60
0
80
Figure 16. OIP3, P
1dB
, NF and Gain vs.
Bias
[1]
(Active Bias, 2V, 3.9 GHz).
Figure 17. OIP3, P
1dB
, NF and Gain vs.
Bias
[1]
(Active Bias, 2V, 5.8 GHz).
Notes:
1. Measurements made on a fixed tuned test fixture that was tuned for noise figure at 2 V 15mA bias. This circuit represents a trade-off
between optimal noise match, maximum gain match and a realizable match based on production test requirements. Circuit losses have
been de-embedded from actual measurements.
2. P
1dB
measurements are performed with passive biasing. Quiescent drain current, I
DSQ
, is set with zero RF drive applied. As P
1dB
is
approached, the drain current may increase or decrease depending on frequency and dc bias point. At lower values of I
dsq
the device is
running closer to class B as power output approaches P
1dB
. This results in higher P
1dB
and higher PAE (power added efficiency) when
compared to a device that is driven by a constant current source as is typically done with active biasing. As an example, at a V
DS
= 4 V
and I
DSQ
= 5 mA, I
d
increases to 30 mA as a P
1dB
of +15 dBm is approached.
5
NF (dB)
15
1.5
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