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ATF-35143-TR1 参数 Datasheet PDF下载

ATF-35143-TR1图片预览
型号: ATF-35143-TR1
PDF下载: 下载PDF文件 查看货源
内容描述: 低噪声赝HEMT的表面贴装塑料封装 [Low Noise Pseudomorphic HEMT in a Surface Mount Plastic Package]
分类和应用:
文件页数/大小: 19 页 / 195 K
品牌: AGILENT [ AGILENT TECHNOLOGIES, LTD. ]
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ATF-35143 Electrical Specifications
T
A
= 25°C, RF parameters measured in a test circuit for a typical device
Symbol
I
dss [1]
V
P [1]
I
d
g
m[1]
I
GDO
I
gss
NF
Parameters and Test Conditions
Saturated Drain Current
Pinchoff Voltage
Quiescent Bias Current
Transconductance
Gate to Drain Leakage Current
Gate Leakage Current
f = 2 GHz
Noise Figure
[3]
f = 900 MHz
f = 2 GHz
G
a
Associated Gain
[3]
f = 900 MHz
f = 2 GHz
OIP3
Output 3
rd
Order
Intercept Point
[4, 5]
f = 900 MHz
f = 2 GHz
P
1dB
1 dB Compressed
Intercept Point
[4]
f = 900 MHz
V
DS
= 1.5 V, V
GS
= 0 V
V
DS
= 1.5 V, I
DS
= 10% of I
dss
V
GS
= 0.45 V, V
DS
= 2 V
V
DS
= 1.5 V, g
m
= I
dss
/V
P
V
GD
= 5 V
V
GD
= V
GS
= -4 V
V
DS
= 2 V, I
DS
= 15 mA
V
DS
= 2 V, I
DS
= 5 mA
V
DS
= 2 V, I
DS
= 15 mA
V
DS
= 2 V, I
DS
= 5 mA
V
DS
= 2 V, I
DS
= 15 mA
V
DS
= 2 V, I
DS
= 5 mA
V
DS
= 2 V, I
DS
= 15 mA
V
DS
= 2 V, I
DS
= 5 mA
V
DS
= 2 V, I
DS
= 15 mA
V
DS
= 2 V, I
DS
= 5 mA
V
DS
= 2 V, I
DS
= 15 mA
V
DS
= 2 V, I
DS
= 5 mA
V
DS
= 2 V, I
DSQ
= 15 mA
V
DS
= 2 V, I
DSQ
= 5 mA
V
DS
= 2 V, I
DSQ
= 15 mA
V
DS
= 2 V, I
DSQ
= 5 mA
Units
mA
V
mA
mmho
µA
µA
dB
dB
dB
dB
dBm
dBm
dBm
dBm
19
16.5
14
Min. Typ.
[2]
40
-0.65
90
65
-0.5
15
120
10
0.4
0.5
0.3
0.4
18
16
20
18
21
14
19
14
10
8
9
9
19.5
18
Max.
80
-0.35
250
150
0.7
0.9
Notes:
1. Guaranteed at wafer probe level
2. Typical value determined from a sample size of 450 parts from 9 wafers.
3. 2 V 5 mA min/max data guaranteed via the 2 V 15 mA production test.
4. Measurements obtained using production test board described in Figure 5.
5. P
out
= -10 dBm per tone
Input
50 Ohm
Transmission
Line Including
Gate Bias T
(0.5 dB loss)
Input
Matching Circuit
Γ_mag
= 0.66
Γ_ang
= 5°
(0.4 dB loss)
DUT
50 Ohm
Transmission
Line Including
Drain Bias T
(0.5 dB loss)
Output
Figure 5. Block diagram of 2 GHz production test board used for Noise Figure, Associated Gain, P
1dB
, and OIP3 measure-
ments. This circuit represents a trade-off between an optimal noise match and a realizable match based on production test
requirements. Circuit losses have been de-embedded from actual measurements.
3