2.0 RADIATION HARDNESS
enhances the total dose radiation hardness of the field and gate
oxides while maintaining current density and reliability. In
addition, for both greater transient radiation-hardness and latch-
up immunity, the UT80CRH196KD is built on epitaxial
substrate wafers.
The UT80CRH196KD incorporates special design and layout
features and is built on UTMC’s Commercial RadHardTM
silicon. The Commercial RadHardTMsilicon is fabricated using
a minimally invasive process module, developed by UTMC, that
RADIATION HARDNESS DESIGN SPECIFICATIONS
Total Dose
1.0E5
25
rads(Si)
MeV-cm2/mg
n/cm2
LET Threshold
Neutron Fluence
1.0E14
3.66E-7
4.9E-4
cm2/bit
Saturated Cross-Section (1Kx8)
Single Event Upset1
Single Event Latchup1
Notes:
errors/device day2
MeV-cm2/mg
LET > 128
o
o
1. Worst case temperature T = 25 C for Single Event Upset and 100 C for Single Event Latchup.
A
2. Adams 90% worst case environment (geosynchronous).
WEIBULL AND DEVICE PARAMETERS FOR ERROR-RATE CALCULATION
SHAPE
PARAMETER
WIDTH
PARAMETER
STRUCTURAL
CROSS-SECTION
ONSET
LET
DEPLETION
FUNNEL
DEPTH
DEPTH
1
14
3.66E-7cm2/bit
14.4MeV-cm2/mg
0.8mm
1.45mm
3.0 ABSOLUTE MAXIMUM RATINGS 1
(Referenced to VSS
)
SYMBOL
PARAMETER
LIMITS
-0.3 to 6.0
UNITS
VDD
DC Supply Voltage
V
V
2
Voltage on Any Pin
-0.3 to VDD+0.3V
VI/O
TSTG
TJ
Storage Temperature
-65 to +150
°C
°C
Maximum Junction Temperature
175
16
Thermal Resistance, Junction-to-Case 3
DC Input Current
QJC
°C/W
II2
mA
±10
Notes:
1. Stresses outside the listed absolute maximum ratings may cause permanent damage to the device. This is a stress rating only, and functional operation of the
device at these or any other conditions beyond limits indicated in the operational sections of this specification is not recommended. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
2. These ratings are provided as design guidelines. They are not guaranteed by test or characterization.
3. Test per MIL-STD-883, Method 1012.
23
AEROFLEX [ AEROFLEX CIRCUIT TECHNOLOGY ]
