1
RADIATION HARDNESS SPECIFICATIONS
PARAMETER
Total Dose
LIMIT
1.0E5
>120
UNITS
rad(Si)
MeV-cm2/mg
n/cm 2
SEL Latchup
Neutron Fluence2
1.0E14
Notes:
1. Logic will not latchup during radiation exposure within the limits defined in the table.
2. Not tested, inherent of CMOS technology.
ABSOLUTE MAXIMUM RATINGS1
SYMBOL
PARAMETER
LIMIT (Mil only)
UNITS
VI/O
Voltage any pin
-.3 to VDD1 +.3
-0.3 to 6.0
-0.3 to 6.0
-65 to +150
+175
V
VDD1
VDD2
TSTG
TJ
Supply voltage
Supply voltage
V
V
Storage Temperature range
Maximum junction temperature
Thermal resistance junction to case
DC input current
°C
°C
QJC
II
20
°C/W
mA
W
±10
PD
Maximum power dissipation
1
Note:
1. Stresses outside the listed absolute maximum ratings may cause permanent damage to the device. This is a stress rating only, functional operation of the device
at these or any other conditions beyond limits indicated in the operational sections is not recommended. Exposure to absolute maximum rating conditions for
extended periods may affect device reliability and performance.
DUAL SUPPLY OPERATING CONDITIONS
SYMBOL
PARAMETER
LIMIT
UNITS
VDD1
Supply voltage
3.0 to 3.6 or 4.5 to 5.5
V
VDD2
VIN
TC
Supply voltage
Input voltage any pin
Temperature range
3.0 to 3.6 or 4.5 to 5.5
0 to VDD1
V
V
-55 to + 125
°C
4
AEROFLEX [ AEROFLEX CIRCUIT TECHNOLOGY ]
