TYPICALPERFORMANCECURVES
APT15GP60K
30
30
25
20
15
V
= 10V.
V
= 15V.
GE
GE
250µs PULSE TEST
<0.5 % DUTY CYCLE
250µs PULSE TEST
<0.5 % DUTY CYCLE
25
20
15
T =25°C
T =25°C
C
C
10
5
10
5
T =-55°C
C
T =-55°C
C
T =125°C
C
T =125°C
C
0
0
0
0.5
1
1.5
2
2.5
3
0
0.5
1
1.5
2
2.5
3
V
,COLLECTER-TO-EMITTERVOLTAGE(V)
V
,COLLECTER-TO-EMITTERVOLTAGE(V)
CE
CE
FIGURE 1, Output Characteristics(V = 15V)
FIGURE 2, Output Characteristics (V = 10V)
GE
GE
100
16
14
12
250µs PULSE TEST
<0.5 % DUTY CYCLE
I
T
= 15A
= 25°C
C
J
T
= -55°C
J
80
60
40
20
0
V
= 120V
CE
V
= 300V
CE
10
8
V
= 480V
CE
6
T
J
= 25°C
4
T
= 125°C
J
2
0
0
2
4
6
8
10
12
0
10
20
30
40
50
60
V
, GATE-TO-EMITTER VOLTAGE(V)
GATE CHARGE (nC)
GE
FIGURE 3, Transfer Characteristics
FIGURE 4, Gate Charge
3.5
3
3.5
3
T
= 25°C.
J
250µs PULSE TEST
<0.5 % DUTY CYCLE
I
=30A
I
C
I
=30A
C
2.5
2
2.5
2
= 15A
I
= 15A
C
C
I
= 7.5A
C
I
= 7.5A
C
1.5
1
1.5
1
V
= 15V.
0.5
0
0.5
0
GE
250µs PULSE TEST
<0.5 % DUTY CYCLE
6
8
10
12
14
16
-50 -25
0
25
50
75
100 125
V
,GATE-TO-EMITTERVOLTAGE(V)
T , Junction Temperature (°C)
GE
J
FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage
FIGURE6,OnStateVoltagevsJunctionTemperature
1.2
80
70
60
50
40
30
20
1.15
1.10
1.05
1.0
0.95
0.9
10
0
0.85
0.8
-50 -25
0
25
50
75
100 125
-50 -25
0
25
50
75 100 125 150
T ,JUNCTIONTEMPERATURE(°C)
T ,CASETEMPERATURE(°C)
J
C
FIGURE7,BreakdownVoltage vs.JunctionTemperature
FIGURE8,DCCollectorCurrentvsCaseTemperature
ADPOW [ ADVANCED POWER TECHNOLOGY ]
