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APT15GP60K 参数 Datasheet PDF下载

APT15GP60K图片预览
型号: APT15GP60K
PDF下载: 下载PDF文件 查看货源
内容描述: 功率MOS 7 IGBT [POWER MOS 7 IGBT]
分类和应用: 晶体晶体管功率控制瞄准线双极性晶体管局域网
文件页数/大小: 6 页 / 199 K
品牌: ADPOW [ ADVANCED POWER TECHNOLOGY ]
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APT15GP60K  
DYNAMIC CHARACTERISTICS  
Symbol Characteristic  
Test Conditions  
MIN  
TYP  
1685  
210  
15  
MAX  
UNIT  
Input Capacitance  
Cies  
Coes  
Cres  
VGEP  
Qg  
Capacitance  
VGE = 0V, VCE = 25V  
f = 1 MHz  
Output Capacitance  
pF  
V
Reverse Transfer Capacitance  
Gate-to-Emitter Plateau Voltage  
7.5  
55  
Gate Charge  
3
VGE = 15V  
Total Gate Charge  
V
CE = 300V  
Qge  
nC  
Gate-Emitter Charge  
12  
IC = 15A  
Qgc  
Gate-Collector ("Miller") Charge  
Switching Safe Operating Area  
15  
SSOA  
TJ = 150°C, RG = 5Ω, VGE  
=
65  
A
15V, L = 100µH,VCE = 600V  
td(on)  
tr  
td(off)  
tf  
8
Turn-on Delay Time  
Current Rise Time  
Turn-off Delay Time  
Current Fall Time  
Inductive Switching (25°C)  
VCC = 400V  
12  
ns  
VGE = 15V  
IC = 15A  
29  
58  
RG = 5Ω  
4
Eon1  
Eon2  
Eoff  
td(on)  
tr  
Turn-on Switching Energy  
Turn-on Switching Energy (Diode) 5  
130  
152  
121  
8
TJ = +25°C  
µJ  
ns  
6
Turn-off Switching Energy  
Turn-on Delay Time  
Current Rise Time  
Turn-off Delay Time  
Inductive Switching (125°C)  
VCC = 400V  
12  
VGE = 15V  
td(off)  
tf  
69  
IC = 15A  
RG = 5Ω  
Current Fall Time  
88  
4 4  
Turn-on Switching Energy  
Eon1  
Eon2  
Eoff  
130  
267  
268  
TJ = +125°C  
55  
Turn-on Switching Energy (Diode)  
µJ  
66  
Turn-off Switching Energy  
THERMAL AND MECHANICAL CHARACTERISTICS  
Symbol Characteristic  
MIN  
TYP  
MAX  
.50  
UNIT  
°C/W  
gm  
RΘJC  
RΘJC  
WT  
Junction to Case (IGBT)  
Junction to Case (DIODE)  
Package Weight  
N/A  
1.90  
1
2
3
4
Repetitive Rating: Pulse width limited by maximum junction temperature.  
For Combi devices, Ices includes both IGBT and FRED leakages  
See MIL-STD-750 Method 3471.  
Eon1 is the clamped inductive turn-on-energy of the IGBT only, without the effect of a commutating diode reverse recovery current  
adding to the IGBT turn-on loss. (See Figure 24.)  
5
6
Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching  
loss. A Combi device is used for the clamping diode as shown in the Eon2 test circuit. (See Figures 21, 22.)  
Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.)  
APTReservestherighttochange,withoutnotice,thespecificationsandinformationcontainedherein.