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AD7891AS-1 参数 Datasheet PDF下载

AD7891AS-1图片预览
型号: AD7891AS-1
PDF下载: 下载PDF文件 查看货源
内容描述: LC2MOS 8通道, 12位高速数据采集系统 [LC2MOS 8-Channel, 12-Bit High Speed Data Acquisition System]
分类和应用: 转换器模数转换器
文件页数/大小: 20 页 / 176 K
品牌: AD [ ANALOG DEVICES ]
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AD7891
Parameter
LOGIC OUTPUTS
Output High Voltage, V
OH
Output Low Voltage, V
OL
DB11–DB0
Floating-State Leakage Current
Floating-State Capacitance
5
Output Coding
A
Version
1
4.0
0.4
±
10
15
B
Version
4.0
0.4
±
10
15
Y
Version
4.0
0.4
±
10
15
Units
V min
V max
µA
max
pF max
Data Format Bit of Control Register = 0
Data Format Bit of Control Register = 1
1.6
0.6
0.7
0.4
+5
18
80
90
400
µs
max
µs
max
µs
max
µs
max
V nom
mA max
µA
max
mW max
µW
max
Test Conditions/Comments
I
SOURCE
= 200
µA
I
SINK
= 1.6 mA
Straight (Natural) Binary
2s Complement
CONVERSION RATE
Conversion Time
Track/Hold Acquisition Time
1.6
0.6
0.7
0.4
+5
17
80
85
400
1.6
0.6
0.7
0.4
+5
17
80
85
400
AD7891-1 Hardware Conversion
AD7891-1 Software Conversion
AD7891-2
±
5% for Specified Performance
POWER REQUIREMENTS
V
DD
I
DD
Normal Mode
Standby Mode
Power Dissipation
Normal Mode
Standby Mode
Logic Inputs = 0 V or V
DD
V
DD
= 5 V
Typically 70 mW
Typically 75
µW
NOTES
1
Temperature Ranges for the A and B Versions: –40°C to +85°C. Temperature Range for the Y Version: –55°C to +105°C.
2
The AD7891-1’s dynamic performance (THD and SNR) and the AD7891-2’s THD are measured with an input frequency of 10 kHz. The AD7891-2’s SNR is
evaluated with an input frequency of 100 kHz.
3
This throughput rate can only be achieved when the part is operated in the parallel interface mode. Maximum achievable throughput rate in the serial interface mode
is 357 kSPS.
4
See Terminology.
5
Sample tested during initial release and after any redesign or process change that may affect this parameter.
6
REF IN must be buffered before being applied to V
INXB
.
Specifications subject to change without notice.
ABSOLUTE MAXIMUM RATINGS*
(T
A
= +25°C unless otherwise noted)
V
DD
to AGND . . . . . . . . . . . . . . . . . . . . . . . . . –0.3 V to +7 V
V
DD
to DGND . . . . . . . . . . . . . . . . . . . . . . . . . –0.3 V to +7 V
Analog Input Voltage to AGND
AD7891-1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
±
17 V
AD7891-2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . –5 V, +10 V
Reference Input Voltage to AGND . . . . –0.3 V to V
DD
+ 0.3 V
Digital Input Voltage to DGND . . . . . . –0.3 V to V
DD
+ 0.3 V
Digital Output Voltage to DGND . . . . . –0.3 V to V
DD
+ 0.3 V
Operating Temperature Range
Commercial (A, B Version) . . . . . . . . . . . . – 40°C to +85°C
Automotive (Y Version) . . . . . . . . . . . . . . –55°C to +105°C
Storage Temperature Range . . . . . . . . . . . . –65°C to +150°C
Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
PQFP Package, Power Dissipation . . . . . . . . . . . . . . 450 mW
θ
JA
Thermal Impedance . . . . . . . . . . . . . . . . . . . . . . 95°C/W
Lead Temperature, Soldering
Vapor Phase (60 sec) . . . . . . . . . . . . . . . . . . . . . . . +215°C
Infrared (15 sec) . . . . . . . . . . . . . . . . . . . . . . . . . . +220°C
PLCC Package, Power Dissipation . . . . . . . . . . . . . . 500 mW
θ
JA
Thermal Impedance . . . . . . . . . . . . . . . . . . . . . . 55°C/W
Lead Temperature, Soldering
Vapor Phase (60 sec) . . . . . . . . . . . . . . . . . . . . . . . +215°C
Infrared (15 sec) . . . . . . . . . . . . . . . . . . . . . . . . . . +220°C
*Stresses above those listed under Absolute Maximum Ratings may cause perma-
nent damage to the device. This is a stress rating only; functional operation of the
device at these or any other conditions above those listed in the operational
sections of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection.
Although the AD7891 features proprietary ESD protection circuitry, permanent damage may
occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD
precautions are recommended to avoid performance degradation or loss of functionality.
WARNING!
ESD SENSITIVE DEVICE
REV. A
–3–