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5962R0924401VHA 参数 Datasheet PDF下载

5962R0924401VHA图片预览
型号: 5962R0924401VHA
PDF下载: 下载PDF文件 查看货源
内容描述: [Aerospace High Voltage Current Shunt Monitor]
分类和应用: 放大器
文件页数/大小: 19 页 / 173 K
品牌: ADI [ ADI ]
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1.5 Radiation features.  
Maximum total dose available (dose rate = 50 – 300 rads(Si)/s):  
Device type 01 ............................................................................................................................. 100 krads(Si) 5/  
Maximum total dose available (dose rate 10 mrads(Si)/s) :  
Device type 02 ............................................................................................................................. 50 krads(Si) 6/  
Single event phenomenon (SEP):  
2
No single event latchup (SEL) occurs at effective linear energy transfer (LET) (see 4.4.4.2)....... 80 MeV-cm /mg 7/  
2. APPLICABLE DOCUMENTS  
2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part  
of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the  
solicitation or contract.  
DEPARTMENT OF DEFENSE SPECIFICATION  
MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for.  
DEPARTMENT OF DEFENSE STANDARDS  
MIL-STD-883  
-
Test Method Standard Microcircuits.  
MIL-STD-1835 - Interface Standard Electronic Component Case Outlines.  
DEPARTMENT OF DEFENSE HANDBOOKS  
MIL-HDBK-103 - List of Standard Microcircuit Drawings.  
MIL-HDBK-780 - Standard Microcircuit Drawings.  
(Copies of these documents are available online at http://quicksearch.dla.mil or from the Standardization Document Order  
Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.)  
2.2 Non-Government publications. The following document(s) form a part of this document to the extent specified herein.  
Unless otherwise specified, the issues of the documents are the issues of the documents cited in the solicitation or contract.  
ASTM INTERNATIONAL (ASTM)  
ASTM F1192 – Standard Guide for the Measurement of Single Event Phenomena (SEP) Induced by Heavy Ion  
Irradiation of Semiconductor Devices.  
(Copies of this document is available online at http://www.astm.org/ or from ASTM International, P.O. Box C700,  
100 Bar Harbor Drive, West Conshohocken, PA 19428-2959).  
_____  
5/ Device type 01 may be dose rate sensitive in a space environment and may demonstrate enhanced low dose rate effects.  
Radiation end point limits for the noted parameters are guaranteed only for the conditions specified in MIL-STD-883,  
method 1019, condition A.  
6/ For device type 02, radiation end point limits for the noted parameters are guaranteed for the conditions specified in  
MIL-STD-883, method 1019, condition D.  
7/ Limits are characterized at initial qualification and after any design or process changes that may affect the SEP  
characteristics, but are not production lot tested unless specified by the customer through the purchase order or contract.  
For more information on single event effect (SEE) test results, customers are requested to contact the manufacturer.  
SIZE  
STANDARD  
5962-09244  
A
MICROCIRCUIT DRAWING  
DLA LAND AND MARITIME  
REVISION LEVEL  
B
SHEET  
COLUMBUS, OHIO 43218-3990  
4
DSCC FORM 2234  
APR 97