TABLE I. Electrical performance characteristics - continued.
Test
Symbol
Conditions 1/, 2/
-55°C ≤ T ≤ +125°C
Group A
subgroups
Device
type
Limits
Unit
A
V
= 15 V
IN
unless otherwise specified
Min
Max
30
Output voltage noise
Output voltage
0.1 Hz to 10 Hz
3/, 7/
3/
4
All
µVp-p
ppm /
°C
e
np-p
5, 6
01, 03
+8.5
TCV
O
temperature coefficient
Long term stability
02
All
+25
50
ppm/
1k hr
Lot qualification test 3/, 8/
∆ V
/
OUT
∆t
1/ Device type 01 supplied to this drawing has been characterized through all levels M, D, P, L, and R of irradiation however
this device is only tested at the R level. Device type 03 supplied to this drawing is only tested at the L level. Pre and post
irradiation values are identical unless otherwise specified in table I. When performing post irradiation electrical
measurements for any RHA level, TA = +25°C.
2/ Device type 01 may be dose rate sensitive in a space environment and may demonstrate enhanced low dose rate effects.
Radiation end point limits for the noted parameters are guaranteed only for the conditions specified in MIL-STD-883,
method 1019, condition A for device type 01 and condition D for device type 03. Device type 03 has been tested at the low
dose rate.
3/ This parameter is not tested post-irradiation.
4/ Line and load regulation specifications include the effect of self-heating.
∆VOUT
∆IOUT
VOUT
%
5/
LDREG
=
X100 =
mA
6/ Minimum load current guaranteed by load regulation test.
6
VMAX - VMIN (-55°C to +125°C)1/180°C x10
7/ TCVO =
.
10 V
8/ Each wafer lot is tested for long-term stability at a chip temperature of 76°C for 168 hours. Sample size is 105 devices with
an accept number of 2.
SIZE
STANDARD
5962-89479
A
MICROCIRCUIT DRAWING
DLA LAND AND MARITIME
REVISION LEVEL
E
SHEET
COLUMBUS, OHIO 43218-3990
6
DSCC FORM 2234
APR 97
ADI [ ADI ]
