Philips Semiconductors
Product specification
NPN microwave power transistor
MX1011B700Y
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
Tj = 120 °C
MAX.
UNIT
Rth j-mb
Rth mb-h
Zth j-h
thermal resistance from junction to mounting base
thermal resistance from mounting base to heatsink
thermal impedance from junction to heatsink
1.12
0.2
K/W
K/W
K/W
note 1
tp = 10 µs; δ = 1%;
0.06
notes 1 and 2
Notes
1. See “Mounting recommendations in the General part of handbook SC19a”.
2. Equivalent thermal impedance under nominal pulse microwave operating conditions.
CHARACTERISTICS
Tmb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
collector cut-off current
CONDITIONS
VCB = 50 V; IE = 0
MAX.
UNIT
ICBO
20
20
5
mA
ICES
collector cut-off current
VCE = 50 V; VBE = 0
VEB = 1.5 V; IC = 0
IC = 140 mA; VBE = 0
IC = 140 mA; VBE = 0
mA
mA
V
IEBO
emitter cut-off current
V(BR)CBO
V(BR)CES
collector-base breakdown voltage
collector-emitter breakdown voltage
65
65
V
APPLICATION INFORMATION
Microwave performance up to Tmb = 25 °C in a broadband test circuit as shown in Fig.3.
f
VCC
(V)
PL
(W)
GP
(dB)
ηC
(%)
MODE OF OPERATION
CONDITIONS
tp = 10 µs; δ = 1%
(GHz)
1.09
50
650;
≥6.0;
≥48;
typ. 740
typ. 7
typ. 55
tp = 0.5 µs; δ = 50%;
tp = 112 µs; δ = 1%
1.03 to 1.09
1.03 to 1.15
1.09
50
50
50
typ. 650
typ. 6.4
typ. 45
Class C
tp = 6.6 µs; δ = 51%;
tp = 3.3 ms; δ = 43%
typ. 300
typ. 700
typ. 7
typ. 45
typ. 55
tp = 32 µs; δ = 1%
typ. 6.7
1997 Feb 18
4
ADI [ ADI ]
