Philips Semiconductors
Product specification
NPN microwave power transistor
MX1011B700Y
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
VCBO
PARAMETER
collector-base voltage
CONDITIONS
open emitter
MIN.
MAX.
65
UNIT
−
−
−
−
−
−
V
VCEO
VCES
VEBO
ICM
collector-emitter voltage
collector-emitter voltage
emitter-base voltage
peak collector current
total power dissipation
open base
15
V
V
V
A
W
RBE = 0 Ω
65
open collector
tp ≤ 10 µs; δ ≤ 1%
3
40
Ptot
Tmb < 75 °C;
1365
tp ≤ 10 µs; δ ≤ 1%
Tstg
Tj
storage temperature
junction temperature
soldering temperature
−65
−
+200
200
°C
°C
°C
Tsld
t ≤ 10 s; note 1
−
235
Note
1. Up to 0.2 mm from ceramic.
MRA445
1600
handbook, halfpage
P
tot
(W)
1200
800
400
0
−50
0
50
100
150
T
200
( C)
o
mb
tp = 10 µs; δ = 1%; Ptot max = 1365 W.
Fig.2 Maximum power dissipation derating as a
function of mounting base temperature.
1997 Feb 18
3
ADI [ ADI ]
