Philips Semiconductors
Product specification
NPN microwave power transistor
MX1011B700Y
FEATURES
QUICK REFERENCE DATA
Microwave performance up to Tmb = 25 °C in a common base class C
broadband amplifier.
• Suitable for short and medium
pulse applications up to
100 µs/10%
MODE OF
OPERATION
f
VCC
(V)
PL
(W)
GP
(dB)
ηC
(%)
CONDITIONS
(GHz)
• Internal input and output
prematching networks allow an
easier design of circuits
Class C
tp = 10 µs;
δ = 1%
1.09
50
650
≥6
≥48
• Diffused emitter ballasting resistors
improve ruggedness
PINNING - SOT439A
PIN
• Interdigitated emitter-base
structure provides high emitter
efficiency
DESCRIPTION
1
2
3
collector
emitter
• Gold metallization with barrier
realizes very good stability of the
characteristics and excellent
lifetime
base connected to flange
• Multicell geometry improves power
sharing and reduces thermal
resistance.
APPLICATIONS
1
handbook, 4 columns
Intended for use in common base,
class C, broadband, pulsed power
amplifiers for IFF, TCAS and Mode S
applications in the 1030 to 1090 MHz
band. Also suitable for medium pulse,
heavy duty operation within the
1030 to 1150 MHz band.
c
b
3
3
e
2
MAM045
Top view
DESCRIPTION
NPN silicon planar epitaxial
microwave power transistor in a
SOT439A metal ceramic flange
package with base connected to
flange.
Fig.1 Simplified outline and symbol.
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO slab is not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.
1997 Feb 18
2
ADI [ ADI ]
