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5962-0151801QYC 参数 Datasheet PDF下载

5962-0151801QYC图片预览
型号: 5962-0151801QYC
PDF下载: 下载PDF文件 查看货源
内容描述: [Field Programmable Gate Array, 32000 Gates, 206MHz, 2880-Cell, CMOS, CQFP208, CERAMIC, QFP-208]
分类和应用: 可编程逻辑
文件页数/大小: 217 页 / 1554 K
品牌: ACTEL [ Actel Corporation ]
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MIL-PRF-38535K  
APPENDIX C  
TABLE C-I. Group E (RHA) TCI/QCI test for class Q, class V and class Y. –continued.  
MIL-STD-883 test method and conditions  
Minimum sample size quantity (accept no.)  
Tests  
1/ 2/  
Subgroups  
Class Q  
Class V  
Class Y  
(class level B)  
(class level S)  
(class level S)  
a. Dose rate upset test  
(Transient irradiation test  
a. For Digital TM1021  
For Linear TM1023  
(temperature at 25°C)  
2(0) devices/wafer or  
11(0) devices/wafer lot  
6/  
a. For Digital TM1021  
For Linear TM1023  
(temperature at 25°C)  
2(0) devices/wafer or  
11(0) devices/wafer lot  
6/  
a. For Digital TM 1021  
For Linear TM1023  
(temperature at 25°C)  
2(0) devices/wafer or  
11(0)devices/inspection lot  
5/  
Subgroup 3  
11/  
b. End point electrical  
parameters test  
b. As specified in  
accordance with  
device specification  
b. As specified in  
accordance with  
device specification  
b. As specified in  
accordance with  
device specification  
Subgroup 4  
Radiation dose rate  
induced latch-up test  
TM 1020  
As specified in the  
device specification  
TM 1020  
As specified in the  
device specification  
TM 1020  
As specified in the  
device specification  
12/  
Subgroup 5  
Single event effects (SEE)  
test  
ASTM F-1192 or JESD57  
4(0) devices or  
As specified in the  
device specification  
ASTM F-1192 or JESD57  
4(0) devices or  
As specified in the  
device specification  
13/  
Note: The screening and QCI/TCI tables from MIL-PRF-38535 and MIL-STD-883 Test Methods 5004 and 5005 have been  
combined for consistency. A future revision of MIL-STD-883 will reflect this change as well. Manufacturers shall document in  
their QM plan the screening and QCI/TCI requirements to either MIL-PRF-38535 or MIL-STD-883.  
1/ Group E tests may be performed prior to device screening. Parts used for one subgroup test may not be used for other subgroups  
but may be used for higher levels in the same subgroup. End point electrical parameters as specified in accordance with device  
specification.  
2/ For devices with solder terminations, group E subgroups test may be performed without balls and columns.  
3/ The radiation hardness assurance capability level (RHACL)/radiation assurance in the SPEC level is the ratio of the capability level  
to the specification level of devices fluence. Subgroups shall be invoked when the radiation hardness assurance capability level  
(RHACL) specification requirements of > 10 are not met. For an example, if RHACL/SPEC ratio is > 10 then this test may not be  
required, but if the RHACL/SPEC ratio falls within > 1 and ≤ 10 then the subgroup test is required.  
4/ This test is to be conducted only when specified in the purchase order or contract. Neutron irradiation test (Displacement damage  
test) is not required for MOS devices unless bipolar elements are included by design.  
117  
 
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