ACE24LC02/04/08/16
Two-wire Serial EEPROM
Memory Organization
ACE24LC02, 2K SERIAL EEPROM:
Internally organized with 32 pages of 8 bytes each, the 2K requires an 8-bit data word address
for random word addressing.
ACE24LC04, 4K SERIAL EEPROM:
Internally organized with 32 pages of 16 bytes each, the 4K requires a 9-bit data word address
for random word addressing.
ACE24LC08, 8K SERIAL EEPROM:
Internally organized with 64 pages of 16 bytes each, the 8K requires a 10-bit data word
address for random word addressing.
ACE24LC16, 16K SERIAL EEPROM:
Internally organized with 128 pages of 16 bytes each, the 16K requires an 11-bit data word
address for random word addressing.
Pin Capacitance
Applicable over recommended operating range from: TA = 25℃, f = 1.0 MHz, VCC = +1.7V.
Symbol
Test Condition
Max
8
Units
pF
Conditions
VI/O = 0V
VIN = 0V
1
CI/O
Input / Output Capacitance (SDA)
Input Capacitance (A0, A1, A2, SCL)
1
CIN
6
pF
Note: 1. This parameter is characterized and is not 100% tested.
DC Characteristics
Applicable over recommended operating range from: TA = -40℃ to +85℃, VCC = +1.7V to +3.6V, (unless otherwise noted).
Symbol
VCC
ICC1
ICC2
ISB1
Parameter
Supply Voltage
Test Condition
Min
Typ
Max
3.6
Units
V
1.7
Supply Current
VCC = 3.6V, Read at 100K
VCC = 3.6V, Write at 100K
VCC = 1.7V, VIN = VCC/ VSS
VCC = 3.6V, VIN = VCC/ VSS
VIN = VCC/VSS
0.4
2.0
1.0
mA
mA
µA
µA
µA
µA
V
Supply Current
2.0
Standby Current
Standby Current
Input Leakage Current
Output Leakage Current
Input Low Level
1.0
ISB2
3.0
ILI
0.10
0.05
3.0
ILO
VOUT = VCC/ VSS
3.0
1
VIL
-0.6
VCCx0.3
5.5
1
VIH
Input High Level
Output Low Level
Output Low Level
VCCx0.7
V
VOL2
VOL1
VCC = 3.0V, IOL = 2.1 mA
VCC = 1.8V, IOL = 0.15 mA
0.4
V
0.2
V
Note: 1. VIL min and VIH max are reference only and are not tested.
VER 1.6
5