5STP 20F1601
I
T
( A )
25°C
10000
9000
8000
7000
6000
5000
4000
3000
2000
125°C
I
TSM
40
2
∫
i dt
5
35
4,5
30
4
25
3,5
20
1000
0
0
0,5
1
1,5
2
2,5
3
V
T
( V )
15
1
10
t ( ms )
3
2,5
100
Fig. 2
Max. on-state voltage characteristics
7
Fig. 3
Surge forward current vs. pulse length. Half
sine wave, single pulse, V
R
= 0 V
V
G
( V )
14
V
FGM
V
G
( V )
6
DC = P
GAVm
12
5
-40 °C
10
500µs
1ms
4
+25 °C
8
2
I
GTmin
+125 °C
4
1
V
GTmin
2
10ms
DC = P
GAVm
0
0
0
0,5
1
0
I
G
( A )
2
4
6
8
10
I
FGM
3
6
12
I
G
( A )
Fig. 4
Gate trigger characteristics
Fig. 5
Gate trigger characteristics
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1061-01 March 05
page 4 of 6
i
2
dt
(10
6
A
2
s)
I
TSM
( kA )
11000
45
5,5
ABB [ THE ABB GROUP ]
