5STP 20F1601
On-state
Maximum rated values
1)
Parameter
Average on-state current
RMS on-state current
Peak non-repetitive surge
current
Limiting load integral
Peak non-repetitive surge
current
Limiting load integral
Characteristic values
Symbol Conditions
I
T(AV)M
I
T(RMS)
I
TSM
It
I
TSM
It
Symbol Conditions
V
T
V
(T0)
r
T
I
H
I
L
T
vj
= 25 °C
T
vj
= 125 °C
T
vj
= 25 °C
T
vj
= 125 °C
I
T
= 2000 A, T
vj
= 125 °C
I
T
= 2000 A - 8000 A, T
vj
= 125 °C
2
2
min
typ
max
1901
2987
27.3×10
3.73×10
3
Unit
A
A
A
A
2
s
A
A
2
s
Unit
V
V
mΩ
mA
mA
mA
mA
Half sine wave, T
c
= 70 °C, f = 50 Hz
tp = 10 ms, T
vj
= 125 °C,
V
D
= V
R
= 0 V
tp = 8.3 ms, T
vj
= 125 °C,
V
D
= V
R
= 0 V
6
3
29.2×10
3.54×10
min
typ
max
1.25
0.948
0.152
170
90
450
350
6
Parameter
On-state voltage
Threshold voltage
Slope resistance
Holding current
Latching current
Switching
Maximum rated values
1)
Parameter
Critical rate of rise of on-
state current
Critical rate of rise of on-
state current
Symbol Conditions
di/dt
crit
di/dt
crit
T
vj
= 125 °C,
I
T
= I
T(AV)
,
V
D
≤
1070 V,
I
FG
= 2 A, t
r
= 0.3 µs
Cont.
f = 50 Hz
Cont.
f = 1 Hz
min
typ
max
200
1000
Unit
A/µs
A/µs
µs
Circuit-commutated turn-off t
q
time
Characteristic values
T
vj
= 125°C, I
TRM
= 2000 A,
V
R
= 200 V, di
T
/dt = -12.5 A/µs,
V
D
≤
0.67⋅V
DRM
, dv
D
/dt = 50V/µs
min
150
Parameter
Recovery charge
Symbol Conditions
Q
rr
T
vj
= 125°C, I
TRM
= 2000 A,
V
R
= 200 V,
di
T
/dt = -12.5 A/µs
V
D
= 0.4⋅V
RM
, I
FG
= 2 A,
t
r
= 0.3 µs, T
vj
= 25 °C
typ
2200
max
Unit
µAs
Gate turn-on delay time
t
gd
2
µs
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1061-01 March 05
page 2 of 6
ABB [ THE ABB GROUP ]
