5STP 20F1601
Triggering
Maximum rated values
1)
Parameter
Peak forward gate voltage
Peak forward gate current
Peak reverse gate voltage
Mean forward gate power
Characteristic values
Symbol Conditions
V
FGM
I
FGM
V
RGM
P
G(AV)
Symbol Conditions
V
GT
T
vj
= -40 °C
T
vj
= 25 °C
T
vj
= 125 °C
min
typ
max
12
10
10
3
Unit
V
A
V
W
Unit
V
Parameter
Gate-trigger voltage
min
typ
max
4
3
0.25
2
500
250
mA
Gate-trigger current
I
GT
T
vj
= -40 °C
T
vj
= 25 °C
T
vj
= 125 °C
10
150
Thermal
Maximum rated values
1)
Parameter
Operating junction
temperature range
Characteristic values
Symbol Conditions
T
vj
min
-40
-40
min
typ
max
125
125
Unit
°C
°C
Unit
K/kW
K/kW
K/kW
K/kW
K/kW
Storage temperature range T
stg
Parameter
Symbol Conditions
Double-side cooled
F
m
= 20...24 kN
Anode-side cooled
F
m
= 20...24 kN
Cathode-side cooled
F
m
= 20...24 kN
Double-side cooled
F
m
= 20...24 kN
Single-side cooled
F
m
= 20...24 kN
typ
max
16
25
45
4
8
Thermal resistance junction R
th(j-c)
to case
R
th(j-c)A
R
th(j-c)C
Thermal resistance case to R
th(c-h)
heatsink
R
th(c-h)
Analytical function for transient thermal
impedance:
Z
th(j-c)
(t) =
∑
R
th i
(1 - e
-t/
τ
i
)
i
=
1
i
R
th i
(K/kW)
τ
i
(s)
1
5.500
0.4653
2
7.240
0.1533
3
2.000
0.0375
4
1.340
0.0034
Fig. 1
Transient thermal impedance junction-to case.
n
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1061-01 March 05
page 3 of 6
ABB [ THE ABB GROUP ]
