5STB 13N6500
Fig. 6
Surge on-state current vs. pulse length.
Half-sine wave.
I
G
(t)
100 %
90 %
I
GM
I
GM
I
Gon
di
G
/dt
t
r
t
p
(I
GM
)
≈
2..5 A
≥
1.5 I
GT
≥
2 A/µs
≤
1
µs
≈
5...20
µs
Fig. 7
Surge on-state current vs. number of pulses.
Half-sine wave, 10 ms, 50Hz.
di
G
/dt
10 %
t
r
t
p
(I
GM
)
t
p
(I
Gon
)
t
I
Gon
Fig. 8
Recommended gate current waveform
Fig. 9
Max. peak gate power loss
Fig. 10
Recovery charge vs. decay rate of on-state
current
Fig. 11
Peak reverse recovery current vs. decay rate
of on-state current
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1035-03 May 06
page 5 of 7