5STB 13N6500
Triggering
Maximum rated values
Note 1
Parameter
Peak forward gate voltage
Max. rated peak forward
gate current
Peak reverse gate voltage
Max. rated peak forward
gate power
Characteristic values
Symbol Conditions
V
FGM
I
FGM
V
RGM
For DC gate current
P
GM
min
typ
max
12
10
10
3
Unit
V
A
V
W
Max. rated gate power loss P
G
see Fig. 9
Parameter
Gate trigger voltage
Gate trigger current
Gate non-trigger voltage
Gate non-trigger current
Symbol Conditions
V
GT
I
GT
V
GD
I
GD
T
vj
= 25 °C
T
vj
= 25 °C
V
D
= 0.4 x V
RM
, T
vj
= 125 °C
V
D
= 0.4 x V
RM
min
typ
max
2.6
400
Unit
V
mA
V
mA
0.3
10
Thermal
Maximum rated values
Note 1
Parameter
Operating junction
temperature range
Characteristic values
Symbol Conditions
T
vj
min
typ
max
125
Unit
°C
°C
Unit
K/kW
K/kW
K/kW
K/kW
K/kW
Storage temperature range T
stg
Parameter
Symbol Conditions
Double-side cooled
F
m
= 81...108 kN
Anode-side cooled
F
m
= 81...108 kN
Cathode-side cooled
F
m
= 81...108 kN
Double-side cooled
F
m
= 81...108 kN
Single-side cooled
F
m
= 81...108 kN
-40
min
typ
140
max
11.4
22.8
22.8
2
4
Thermal resistance junction R
th(j-c)
to case
(Valid for one thyristor half
no heat flow to the second
half.)
R
th(j-c)A
R
th(j-c)C
Thermal resistance case to R
th(c-h)
heatsink
R
th(c-h)
Analytical function for transient thermal
impedance:
Z
th(j- c)
(t) =
∑
R
i
(1 - e
- t/
τ
i
)
i
=
1
i
R
i
(K/kW)
τ
i
(s)
1
6.770
0.8651
2
2.510
0.1558
3
1.340
0.0212
4
0.780
0.0075
Fig. 1
Transient thermal impedance junction-to case
n
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1035-03 May 06
page 3 of 7
ABB [ THE ABB GROUP ]
