V
SM
I
T(AV)M
I
T(RMS)
I
TSM
V
T0
r
T
=
6500 V
=
1405 A
=
2205 A
= 22×10
3
A
=
1.2 V
=
0.6 mΩ
Bi-Directional Control Thyristor
5STB 13N6500
Doc. No. 5SYA1035-03 May 06
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Two thyristors integrated into one wafer
Patented free-floating silicon technology
Designed for energy management and industrial applications
Optimum power handling capability
Interdigitated amplifying gate.
The electrical and thermal data are valid for one-thyristor-half of the device (unless otherwise stated)
Blocking
Maximum rated values
Note 1
Parameter
Max. surge peak blocking
voltage
Max. repetitive peak
reverse blocking voltage
Critical rate of rise of
commutating voltage
Characteristic values
Symbol Conditions
V
SM
V
RM
1)
min
typ
max
6500
5600
2000
Unit
V
V
V/µs
f = 5 Hz, t
p
= 10 ms
f = 50 Hz, t
p
= 10 ms
Exp. to 3750 V, T
vj
= 125°C
1)
dv/dt
crit
Parameter
Max. leakage current
Symbol Conditions
I
RM
V
RM
, T
vj
= 125 °C
min
typ
max
400
Unit
mA
1) V
RM
is equal to V
SM
up to T
vj
= 110 °C; de-rating of 0.11% per °C applicable for Tj below +5 °C
Mechanical data
Maximum rated values
Note 1
Parameter
Mounting force
Acceleration
Acceleration
Characteristic values
Symbol Conditions
F
M
a
a
Device unclamped
Device clamped
min
81
typ
90
max
108
50
100
Unit
kN
m/s
m/s
Unit
kg
mm
mm
mm
2
2
Parameter
Weight
Housing thickness
Surface creepage distance
Air strike distance
Symbol Conditions
m
H
D
S
D
a
F
M
= 90 kN, T
a
= 25 °C
min
35
53
22
typ
max
2.9
35.6
Note 1 Maximum rated values indicate limits beyond which damage to the device may occur
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
ABB [ THE ABB GROUP ]
