5SNS 0300U120100
1
Analytical function for transient thermal
impedance:
Z
th(j-h)
[K / W] IGBT, DIODE
Z
th(j-h)
Diode
0.1
Z
th JH
(t) =
å
R
i
(1 - e
-t/
t
i
)
i
=
1
2
9
14
17
21
Z
th(j-h)
IGBT
IGBT
n
i
Ri(K/kW)
t
i
(ms)
Ri(K/kW)
t
i
(ms)
1
117
164
167
139
3
2.4
0.5
10
1.2
4
1.6
0.2
5
0.01
0.001
0.001
0.01
t [s]
0.1
1
Fig. 16
Typical thermal impedance vs time
This technical information specifies semiconductor devices but promises no characteristics. No warranty or
guarantee expressed or implied is made regarding delivery, performance or suitability.
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
ABB Switzerland Ltd
Semiconductors
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CH-5600 Lenzburg, Switzerland
Telephone
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Email
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+41 (0)58 586 1419
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DIODE
Doc. No. 5SYA1528-02 July 03
ABB [ THE ABB GROUP ]
