5SNS 0300U120100
IGBT characteristic values
Parameter
Collector (-emitter)
breakdown voltage
Collector-emitter
saturation voltage
2)
Symbol Conditions
V
(BR)CES
V
CE sat
I
CES
I
GES
V
GE(TO)
Q
ge
C
ies
C
oes
C
res
t
d(on)
t
r
t
d(off)
t
f
E
on
V
GE
= 0 V, I
C
= 10 mA, T
vj
= 25 °C
I
C
= 300 A, V
GE
= 15 V
V
CE
= 1200 V, V
GE
= 0 V
T
vj
= 25 °C
T
vj
= 125 °C
T
vj
= 25 °C
T
vj
= 125 °C
min
1200
typ
max
Unit
V
1.9
2.1
2.3
1
V
V
mA
mA
nA
V
nC
Collector cut-off current
Gate leakage current
Gate-emitter threshold voltage
Gate charge
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
15
-500
4.5
4000
27
3.0
1.3
150
180
80
80
770
750
60
70
19
28
24
34
1650
20
500
6.5
V
CE
= 0 V, V
GE
=
±20
V, T
vj
= 125 °C
I
C
= 12 mA, V
CE
= V
GE
, T
vj
= 25 °C
I
C
= 300 A, V
CE
= 600 V,
V
GE
= -15 V .. 15 V
V
CE
= 25 V, V
GE
= 0 V, f = 1 MHz,
T
vj
= 25 °C
V
CC
= 600 V,
I
C
= 300 A,
R
G
= 3.3
W,
V
GE
=
±15
V,
L
s
= 55 nH, inductive load
V
CC
= 600 V,
I
C
= 300 A,
R
G
= 3.3
W,
V
GE
=
±15
V,
L
s
= 55 nH, inductive load
V
CC
= 600 V, I
C
= 300 A,
V
GE
= ±15, R
G
= 3.3
W,
L
s
= 55 nH, inductive load
V
CC
= 600 V, I
C
= 300 A,
V
GE
= ±15, R
G
= 3.3
W,
L
s
= 55 nH, inductive load
T
vj
= 25 °C
T
vj
= 125 °C
T
vj
= 25 °C
T
vj
= 125 °C
T
vj
= 25 °C
T
vj
= 125 °C
T
vj
= 25 °C
T
vj
= 125 °C
T
vj
= 25 °C
T
vj
= 125 °C
T
vj
= 25 °C
T
vj
= 125 °C
nF
ns
ns
ns
ns
Turn-on switching energy
mJ
Turn-off switching energy
Short circuit current
Module stray inductance
plus to minus
Resistance, terminal-chip
E
off
I
SC
L
s
DC
R
CC’+EE’
mJ
A
nH
mΩ
t
psc
≤
10
µs,
V
GE
= 15 V, T
vj
= 125 °C,
V
CC
= 900 V, V
CEM CHIP
≤
1200 V
T
h
= 25 °C
T
h
= 125 °C
0.9
1.0
2) Collector emitter saturation voltage is given at chip level
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1528-02 July 03
page 2 of 9
ABB [ THE ABB GROUP ]
