5SNS 0300U120100
0.10
0.09
0.08
0.07
0.06
0.05
0.04
0.03
0.02
0.01
2
E
SW
[
mJ
]
=
(1,74
E
-
4
´
I
C
+
1,25
E
-
1
´
I
C
+
9,38)
0.10
V
CC
= 600 V
R
G
= 3.3 ohm
V
GE
= ±15 V
T
vj
= 125 °C
L
s
= 55 nH
0.09
0.08
0.07
0.06
0.05
0.04
0.03
0.02
0.01
0.00
V
CC
= 600 V
I
C
= 300 A
V
GE
= ±15 V
T
vj
= 125 °C
L
s
= 55 nH
E
on
E
on
, E
off
[J]
E
on
, E
off
[J]
E
off
E
on
E
off
0.00
0
100
200
300
400
I
C
[A]
500
600
700
0
5
10
15
R
G
[ohm]
20
25
Fig. 5
Typical switching energies per pulse
vs collector current
Fig. 6
Typical switching energies per pulse
vs gate resistor
1.00
10.00
t
d(off)
t
d(off)
t
d(on)
t
d(on)
, t
r
, t
d(off)
, t
f
[µs]
t
d(on)
, t
r
, t
d(off)
, t
f
[µs]
1.00
t
r
0.10
t
d(on)
t
r
0.10
t
f
V
CC
= 600 V
R
G
= 3.3 ohm
V
GE
= ±15 V
T
vj
= 125 °C
L
s
= 55 nH
0.01
0
100
200
300
400
I
C
[ A ]
500
600
700
t
f
V
CC
= 600 V
I
C
= 300 A
V
GE
= ±15 V
T
vj
= 125 °C
L
s
= 55 nH
20
25
0.01
0
5
10
15
R
G
[ohm]
Fig. 7
Typical switching times
vs collector current
Fig. 8
Typical switching times
vs gate resistor
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1528-02 July 03
page 6 of 9
ABB [ THE ABB GROUP ]
