5SNA 0400J650100
2000
1800
1600
E
rec
[mJ], I
rr
[A], Q
rr
[µC]
1400
1200
1000
800
600
400
200
E
rec
[mJ] = -2.1 x 10
-3
x I
C2
+ 3.58 x I
C
+ 286
1600
V
CC
= 3600 V
R
G
= 5.6 ohm
V
GE
= ±15 V
T
vj
= 125 °C
L
σ
= 280 nH
E
rec
1400
1200
E
rec
[mJ], I
rr
[A], Q
rr
[µC]
1000
800
600
R
G
= 39 ohm
V
CC
= 3600 V
I
F
= 400 A
V
GE
= ±15 V
T
vj
= 125 °C
L
σ
= 280 nH
E
rec
Q
rr
Q
rr
I
rr
R
G
= 27 ohm
R
G
= 5.6 ohm
I
rr
200
0
0
100 200 300 400 500 600 700 800 900
I
F
[A]
0
0.5
0
R
G
= 18 ohm
1
R
G
= 12 ohm
400
1.5
R
G
= 8.2 ohm
2
2.5
di/dt [kA/µs]
Fig. 12
Typical reverse recovery characteristics
vs forward current
Fig. 13
Typical reverse recovery characteristics
vs di/dt
800
700
1000
V
CC
≤
4400 V
di/dt
≤
2500 A/µs
T
vj
= 125 °C
L
σ
≤
280 nH
800
600
125 °C
25 °C
500
400
300
200
200
100
0
0
1
2
V
F
[V]
3
4
5
0
0
1000
2000
3000
I
R
[A]
400
I
F
[A]
600
4000
5000
6000
7000
V
R
[V]
Fig. 14
Typical diode forward characteristics,
chip level
Fig. 15
Safe operating area diode (SOA)
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA 1592-01 Jun 07
page 8 of 9
ABB [ THE ABB GROUP ]
