5SNA 0400J650100
1000
20
V
GE
= 0V
f
OSC
= 1 MHz
V
OSC
= 50 mV
C
ies
V
CC
= 3600 V
15
100
10
C
oes
V
GE
[V]
C [nF]
10
C
res
1
5
I
C
= 400 A
T
vj
= 25 °C
0.1
0
5
10
15
20
V
CE
[V]
25
30
35
0
0
1
2
Q
g
[µC]
3
4
5
Fig. 9
Typical capacitances
vs collector-emitter voltage
Fig. 10
Typical gate charge characteristics
2.5
V
CC
≤
4400 V, T
vj
= 125 °C, V
GE
= ±15 V
R
Goff
= 5.6 ohm, L
σ
≤
280 nH
2
1.5
I
Cpulse
/ I
C
1
0.5
Chip
Module
0
0
1000
2000
3000 4000
V
CE
[V]
5000
6000
7000
Fig. 11
Turn-off safe operating area (RBSOA)
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA 1592-01 Jun 07
page 7 of 9
ABB [ THE ABB GROUP ]
