5SNA 0400J650100
8
7
6
5
E
on
, E
off
[J]
E
on
, E
off
[J]
V
CC
= 3600 V
R
G
= 5.6 ohm
V
GE
= ±15 V
T
vj
= 125 °C
L
σ
= 280 nH
9
8
7
6
5
4
3
2
E
off
1
E
sw
[J] = 6.8 x 10 x I
C
+ 8.5 x 10 x I
C
+ 0.451
-6
2
-3
V
CC
= 3600 V
I
C
= 400 A
V
GE
= ±15 V
T
vj
= 125 °C
L
σ
= 280 nH
E
on
4
E
on
3
E
off
2
1
0
0
100
200
300
400
500
600
700
800
900
I
C
[A]
0
0
5
10
15
20
R
G
[ohm]
25
30
35
40
Fig. 5
Typical switching energies per pulse
vs collector current
Fig. 6
Typical switching energies per pulse
vs gate resistor
10
V
CC
= 3600 V
R
G
= 5.6 ohm
V
GE
= ±15 V
T
vj
= 125 °C
L
σ
= 280 nH
t
d(on)
, t
r
, t
d(off)
, t
f
[µs]
t
d(off)
1
t
f
t
d(on)
t
d(on)
, t
r
, t
d(off)
, t
f
[µs]
10
V
CC
= 3600 V
I
C
= 400 A
V
GE
= ±15 V
T
vj
= 125 °C
L
σ
= 280 nH
t
d(off)
t
d(on)
1
t
f
t
r
t
r
0.1
0
200
400
I
C
[A]
600
800
1000
0.1
0
5
10
15
20
R
G
[ohm]
25
30
35
40
Fig. 7
Typical switching times
vs collector current
Fig. 8
Typical switching times
vs gate resistor
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA 1592-01 Jun 07
page 6 of 9