5SHX 06F6010
Diode Data
On-state
(see Fig. 9 to 12, 24, 25)
Maximum rated values
Note 1
Parameter
Max. average on-state
current
Max. RMS on-state current
Max. peak non-repetitive
surge current
Limiting load integral
Max. peak non-repetitive
surge current
Limiting load integral
Characteristic values
Symbol Conditions
I
F(AV)M
Half sine wave, T
C
= 85 °C
I
F(RMS)
I
FSM
I
2
t
I
FSM
I
2
t
Symbol Conditions
V
F
I
F
= 520 A, T
vj
= 115°C
V
(F0)
r
F
T
vj
= 115°C
I
F
= 100...1000 A
t
p
= 1 ms, T
vj
= 115°C, V
R
= 0 V
t
p
= 10 ms, T
vj
= 115°C, V
R
= 0 V
min
typ
max
110
180
2.5×10
3
Unit
A
A
A
A
2
s
A
A
2
s
Unit
V
V
mΩ
31.25×10
8×10
3
3
32×10
min
typ
max
6.3
3.3
5.8
3
Parameter
On-state voltage
Threshold voltage
Slope resistance
Turn-on
(see Fig. 24, 25)
Characteristic values
Parameter
Peak forward recovery
voltage
Symbol Conditions
V
FRM
dI
F
/dt = 300 A/µs, T
vj
= 115°C
dI
F
/dt = 1400 A/µs, T
vj
= 115°C
min
typ
max
80
250
Unit
V
V
Turn-off
(see Fig. 13 to 17, 24, 25)
Maximum rated values
Note 1
Parameter
Symbol Conditions
Max. decay rate of on-state di/dt
crit
I
FM
= 520 A, T
vj
= 115 °C
current
V
DClink
= 3900 V
Characteristic values
min
typ
max
190
Unit
A/µs
Parameter
Reverse recovery current
Reverse recovery charge
Turn-off energy
Symbol Conditions
I
FM
= 520 A, V
DC-Link
= 3300 V
I
RM
-dI
F
/dt = 190 A/µs, L
CL
= 1 µH
Q
rr
C
CL
= 0.5 µF, R
S
= 3.5
Ω,
E
rr
T
vj
= 115°C, D
CL
= 5SDF 02D6004
min
typ
max
320
TBD
1.3
Unit
A
µC
J
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1222-05 Aug 07
page 3 of 13
ABB [ THE ABB GROUP ]
