5SHX 06F6010
E
rr
[J]
1.5
T
j
= 115 °C
¬
-di
F
/dt = 190 A/ s
1.0
V
D
= 3300V
TBD
0.5
0.0
0
100
200
300
400
500
600
I
FGQ
[A]
Fig. 13
Upper scatter range of diode turn-off energy
per pulse vs. turn-off current
Fig. 14
Upper scatter range of diode turn-off energy
per pulse vs decay rate of on-state current
I
rr
[A]
T
j
= 115°C
di
F
/dt = 190 A/µs
V
D
= 3300 V
320
TBD
280
240
200
0
90
180
270
360
450
540
I
FQ
[A]
Fig. 15
Upper scatter range of diode reverse recovery
charge vs decay rate of on-state current
Fig. 16
Upper scatter range of diode reverse recovery
current vs decay rate of on-state current
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1222-05 Aug 07
page 9 of 13
ABB [ THE ABB GROUP ]
