5SGA 15F2502
Gate
Maximum rated values
1)
Parameter
Repetitive peak reverse
voltage
Repetitive peak reverse
current
Characteristic values
Symbol Conditions
V
GRM
I
GRM
V
GR
= V
GRM
min
typ
max
17
20
Unit
V
mA
Parameter
Gate trigger voltage
Gate trigger current
Symbol Conditions
V
GT
I
GT
1)
min
typ
1.5
1.5
max
Unit
V
A
T
vj
= 25°C,
V
D
= 24 V, R
A
= 0.1
Ω
Thermal
Maximum rated values
Parameter
Junction operating temperature
Storage temperature range
Characteristic values
Symbol
T
vj
T
stg
Symbol
R
th(j-c)
R
th(j-c)A
R
th(j-c)C
Conditions
min
0
0
typ
max
125
125
Unit
°C
°C
Unit
K/kW
K/kW
K/kW
K/kW
K/kW
Parameter
Thermal resistance junction to case
Conditions
Double side cooled
Anode side cooled
Cathode side cooled
Single side cooled
Double side cooled
min
typ
max
27
49
60
16
8
Thermal resistance case to heatsink
(Double side cooled)
R
th(c-h)
R
th(c-h)
Analytical function for transient thermal
impedance:
Z
th(j - c)
(t) =
∑
R
i
(1 - e
i
=
1
2
5.051
0.0950
i
R
i
(K/kW)
τ
i
(s)
1
14.570
0.4610
3
7.285
0.0120
n
- t/
τ
i
)
4
0.097
0.0010
Fig. 1
Transient thermal impedance, junction to case
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1214-02 Oct. 06
page 3 of 9
ABB [ THE ABB GROUP ]
