V
DRM
I
TGQM
I
TSM
V
T0
r
T
V
Dclink
=
=
=
=
=
=
2500
1500
10×10
3
1.45
0.90
1400
V
A
A
V
mΩ
V
Asymmetric Gate turn-off
Thyristor
5SGA 15F2502
Doc. No. 5SYA1214-02 Oct. 06
•
Patented free-floating silicon technology
•
Low on-state and switching losses
•
Annular gate electrode
•
Industry standard housing
•
Cosmic radiation withstand rating
Blocking
Maximum rated values
1)
Parameter
Repetitive peak off-state
voltage
Repetitive peak reverse
voltage
Permanent DC voltage for
100 FIT failure rate
Characteristic values
Symbol Conditions
V
DRM
V
RRM
V
DC-link
Ambient cosmic radiation at sea level
in open air.
V
GR
≥
2 V
min
typ
max
2500
17
1400
Unit
V
V
V
Parameter
Repetitive peak off-state
current
Repetitive peak reverse
current
Symbol Conditions
I
DRM
I
RRM
V
D
= V
DRM
, V
GR
≥
2 V
V
R
= V
RRM
, R
GK
=
∞ Ω
min
typ
max
100
50
Unit
mA
mA
Mechanical data
Maximum rated values
1)
Parameter
Mounting force
Characteristic values
Symbol Conditions
F
m
Symbol Conditions
D
p
H
m
D
s
D
a
Anode to Gate
Anode to Gate
± 0.1 mm
min
14
min
25.8
25
15
typ
15
typ
47
max
16
max
26.2
0.6
Unit
kN
Unit
mm
mm
kg
mm
mm
Parameter
Pole-piece diameter
Housing thickness
Weight
Surface creepage distance
Air strike distance
Note 1 Maximum rated values indicate limits beyond which damage to the device may occur
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
ABB [ THE ABB GROUP ]
