5SGA 15F2502
GTO Data
On-state
Maximum rated values
1)
Parameter
Max. average on-state
current
Max. RMS on-state current
Max. peak non-repetitive
surge current
Limiting load integral
Max. peak non-repetitive
surge current
Limiting load integral
Characteristic values
Symbol Conditions
I
T(AV)M
I
T(RMS)
I
TSM
I
2
t
I
TSM
I
2
t
Symbol Conditions
V
T
V
(T0)
r
T
I
H
1)
min
typ
max
570
900
Unit
A
A
3
Half sine wave, T
C
= 85 °C
t
p
= 10 ms, T
vj
= 125°C, sine wave
After Surge: V
D
= V
R
= 0 V
t
p
= 1 ms, T
vj
= 125°C, sine wave
After Surge: V
D
= V
R
= 0 V
10×10
A
A
2
s
A
A
2
s
Unit
V
V
mΩ
A
500×10
20×10
3
3
200×10
min
typ
max
2.8
1.45
0.90
50
3
Parameter
On-state voltage
Threshold voltage
Slope resistance
Holding current
I
T
= 1500 A, T
vj
= 125°C
T
vj
= 125°C
I
T
= 300...2000 A
T
vj
= 25°C
Turn-on switching
Maximum rated values
Parameter
Critical rate of rise of on-
state current
Critical rate of rise of on-
state current
Min. on-time
Symbol Conditions
di
T
/dt
cr
di
T
/dt
cr
t
on
T
vj
= 125°C,
I
T
= 1500 A, I
GM
= 30 A,
di
G
/dt = 20 A/µs
f = 200 Hz
f = 1 Hz
min
typ
max
400
600
Unit
A/µs
A/µs
µs
V
D
= 0.5 V
DRM
, T
vj
= 125 °C
I
T
= 1500 A, di/dt = 100 A/µs,
I
GM
= 30 A, di
G
/dt = 20 A/µs,
C
S
= 3 µF, R
S
= 5
Ω
80
Characteristic values
Parameter
Turn-on delay time
Rise time
Turn-on energy per pulse
Symbol Conditions
t
d
t
r
E
on
V
D
= 0.5 V
DRM
, T
vj
= 125 °C
I
T
= 1500 A, di/dt = 100 A/µs,
I
GM
= 30 A, di
G
/dt = 20 A/µs,
C
S
= 3 µF, R
S
= 5
Ω
min
typ
max
2
4
0.5
Unit
µs
µs
J
Turn-off switching
Maximum rated values
1)
Parameter
Max. controllable turn-off
current
Min. off-time
Symbol Conditions
I
TGQM
t
off
V
DM
≤
V
DRM
, di
GQ
/dt = 30 A/µs,
C
S
= 3 µF, L
S
≤
0.3 µH
V
D
= 0.5 V
DRM
, T
vj
= 125 °C
V
DM
≤
V
DRM
, di
GQ
/dt = 30 A/µs,
I
TGQ
= I
TGQM
,
R
S
= 5
Ω,
C
S
= 3 µF, L
S
= 0.3 µH
min
typ
max
1500
Unit
A
µs
80
Characteristic values
Parameter
Storage time
Fall time
Turn-on energy per pulse
Peak turn-off gate current
Symbol Conditions
t
S
t
f
E
off
I
GQM
V
D
= 0.5 V
DRM
, T
vj
= 125 °C
V
DM
≤
V
DRM
, di
GQ
/dt = 30 A/µs,
I
TGQ
= I
TGQM
,
R
S
= 5
Ω,
C
S
= 3 µF, L
S
= 0.3 µH
min
typ
max
15
2
2
480
Unit
µs
µs
J
A
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1214-02 Oct. 06
page 2 of 9
ABB [ THE ABB GROUP ]
