Advanced Analog Technology, Inc.
AAT8641E DETECTION VOLTAGE AND DELAY TIME (25℃)
PARAMETER
TEST CONDITION
SYMBOL
MIN
TYP MAX
UNIT
Detect Rising Edge of Supply
Voltage
VC1
Over Charge Threshold Voltage
4.255
4.280
4.305
V
Detect Falling Edge of Supply
Voltage
Detect Falling Edge of Supply
Voltage
Detect Rising Edge of Supply
Voltage
VC2
VD1
VD2
Over Charge Release Voltage
VC1-0.25 VC1-0.20 VC1-0.15
2.201 2.281 2.361
VD1+0.5 VD1+0.6 VD1+0.7
V
V
V
Over Discharge Threshold
Voltage
Over Discharge Release Voltage
VDD = 3.6V to 4.5V
tC1
tD1
Over Charge Delay Time
0.700
87.5
1.000
125.0
1.300
162.5
s
VDD = 3.6V to 2.2V
Over Discharge Delay Time
ms
Detect Rising Edge of “VN” Pin
Voltage ( Dout Response
Over Current Level 1 Detection
Voltage
VOC1
80
100
480
120
600
mV
mV
with tOC1 Delay Time)
Detect Rising Edge of “VN”
Pin Voltage ( Dout Response with
Over Current Level 2 Detection
Voltage
VOC2
400
tOC2 Delay Time)
VDD = 3.0V , Detect Rising Edge
of “VN” Pin Voltage ( Dout
Response with tshort Delay Time)
VDD −1.3
VDD −0.9
Vshort
V −1.7
Short Circuit Detection Voltage
V
DD
Over Current Level 1 Detection
Delay Time
tOC1
VDD = 3.0V
5.6
8.0
10.4
ms
Room Temp. ⇒
Low or High Temp. ⇒
VDD = 3.0V
1.4
1.1
2.0
2.0
2.6
3.4
ms
ms
Over Current Level 2 Detection
Delay Time
tOC2
Short Circuit Detection Delay
Time
μs
tshort
VDD = 3.0V
10
50
Detect Rising Edge of “ Dout ” Pin
Voltage (when VD1<VDD<VD2)
VDD =3.5V; Cout =3.0V;VN=0V
VCHR
−2.0
−1.3
−0.6
Charger Detection Voltage
V
Cout High Level Resistance
Cout Low Level Resistance
Dout High Level Resistance
RCOH
RCOL
R DOH
1
2
10
kΩ
kΩ
kΩ
VDD =4.5V; Cout =0.5V;VN=0V
VDD =3.5V; Dout =3.0V;VN=0V
150
2.5
602
5.0
2,380
10.0
VDD =1.8V;
Dout Low Level Resistance
R DOL
2.5
5.0
10.0
kΩ
Dout =0.5V;VN=1.8V
Internal Resistance between VN
and VDD
RVND
RVNG
VDD =1.8V; VN=0V
VDD =3.5V; VN=3.5V
100
50
300
150
900
300
kΩ
kΩ
Internal Resistance between VN
and GND
– 台灣類比科技股份有限公司 –
– Advanced Analog Technology, Inc. –
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