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AAT8641F 参数 Datasheet PDF下载

AAT8641F图片预览
型号: AAT8641F
PDF下载: 下载PDF文件 查看货源
内容描述: 单节锂离子电池保护IC [ONE-CELL LI-ION BATTERY PROTECTION IC]
分类和应用: 电池
文件页数/大小: 25 页 / 626 K
品牌: AAT [ ADVANCED ANALOG TECHNOLOGY, INC. ]
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Advanced Analog Technology, Inc.  
AAT8641 Series  
AAT8641B DETECTION VOLTAGE AND DELAY TIME (25)  
PARAMETER  
SYMBOL  
TEST CONDITION  
MIN TYP MAX  
UNIT  
Detect Rising Edge of Supply  
Voltage  
Detect Falling Edge of Supply  
Voltage  
Detect Falling Edge of Supply  
Voltage  
Detect Rising Edge of Supply  
Voltage  
VC1  
Over Charge Threshold Voltage  
4.325  
VC1-0.25 VC1-0.20 VC1-0.15  
2.220 2.300 2.380  
VD1+0.6 VD1+0.7 VD1+0.8  
4.350  
4.375  
V
VC2  
VD1  
VD2  
Over Charge Release Voltage  
V
V
V
Over Discharge Threshold  
Voltage  
Over Discharge Release Voltage  
VDD = 3.6V to 4.5V  
tC1  
tD1  
Over Charge Delay Time  
0.088  
22.4  
0.125  
32.0  
0.163  
41.6  
s
VDD = 3.6V to 2.2V  
Over Discharge Delay Time  
ms  
Detect Rising Edge of “VN” Pin  
Voltage ( Dout Response with  
Over Current Level 1 Detection  
Voltage  
VOC1  
130  
400  
150  
500  
170  
600  
mV  
mV  
tOC1 Delay Time)  
Detect Rising Edge of “VN”  
Pin Voltage ( Dout Response  
Over Current Level 2 Detection  
Voltage  
VOC2  
with tOC2 Delay Time)  
VDD = 3.0V , Detect Rising Edge  
of “VN” Pin Voltage  
( Dout Response with tshort Delay  
VDD 1.3 VDD 0.9  
Vshort  
V 1.7  
Short Circuit Detection Voltage  
V
DD  
Time)  
Over Current Level 1 Detection  
Delay Time  
VDD = 3.0V  
tOC1  
tOC2  
tshort  
VCHR  
2.8  
4.0  
5.2  
ms  
Room Temp. ⇒  
Low or High Temp. ⇒  
VDD = 3.0V  
1.4  
1.1  
2.0  
2.0  
2.6  
3.4  
ms  
ms  
Over Current Level 2 Detection  
Delay Time  
Short Circuit Detection Delay  
Time  
μs  
VDD = 3.0V  
10  
50  
Detect Rising Edge of “ Dout  
2.0  
1.3  
0.6  
Charger Detection Voltage  
V
Pin Voltage (when VD1VDD  
VD2)  
Cout High Level Resistance  
Cout Low Level Resistance  
RCOH  
RCOL  
R DOH  
VDD =3.5V; Cout =3.0V;VN=0V  
VDD =4.5V; Cout =0.5V;VN=0V  
VDD 3.5V; Dout =3.0V;VN=0V  
1
2
10  
kΩ  
kΩ  
kΩ  
150  
2.5  
602  
5.0  
2,380  
10.0  
High Level Resistance  
Dout  
VDD =1.8V;  
Low Level Resistance  
Dout  
R DOL  
2.5  
5.0  
10.0  
kΩ  
Dout =0.5V;VN=1.8V  
Internal Resistance between VN  
and VDD  
RVND  
RVNG  
VDD =1.8V; VN=0V  
VDD =3.5V; VN=3.5V  
100  
50  
300  
150  
900  
300  
kΩ  
kΩ  
Internal Resistance between VN  
and GND  
台灣類比科技股份有限公司 –  
Advanced Analog Technology, Inc. –  
Page 5 of 25  
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