Advanced Analog Technology, Inc.
AAT8641A DETECTION VOLTAGE AND DELAY TIME (25℃)
PARAMETER
SYMBOL
TEST CONDITION
Min
Typ
Max
Unit
Detect Rising Edge of Supply
Voltage
VC1
Over Charge Threshold Voltage
4.300
4.325
4.350
V
Detect Falling Edge of Supply
Voltage
Detect Falling Edge of Supply
Voltage
Detect Rising Edge of Supply
Voltage
VC2
VD1
VC1 − 0.30 VC1 − 0.25 VC1 − 0.20
2.420 2.500 2.580
VD1+0.3 VD1+0.4 VD1+0.5
Over Charge Release Voltage
V
V
Over Discharge Threshold
Voltage
VD2
tC1
Over Discharge Release Voltage
Over Charge Delay Time
V
s
VDD = 3.6V to 4.5V
0.700
87.5
1.000
125.0
1.300
162.5
tD1
VDD = 3.6V to 2.4V
Over Discharge Delay Time
ms
Detect Rising Edge of “VN” Pin
Voltage ( Dout Response with
Over Current Level 1 Detection
Voltage
VOC1
130
400
150
500
170
600
mV
tOC1 Delay Time)
Detect Rising Edge of “VN”
Pin Voltage ( Dout Response
Over Current Level 2 Detection
Voltage
VOC2
mV
with tOC2 Delay Time)
VDD = 3.0V , Detect Rising Edge
of “VN” Pin Voltage ( Dout
Response with tshort Delay
Time)
VDD −1.3
VDD −0.9
Vshort
V −1.7
Short Circuit Detection Voltage
V
DD
Over Current Level 1 Detection
Delay Time
tOC1
tOC2
tshort
VCHR
VDD = 3.0V
5.6
8.0
10.4
ms
Room Temp. ⇒
Low or High Temp. ⇒
VDD = 3.0V
1.4
1.1
2.0
2.0
2.6
3.4
ms
ms
Over Current Level 2 Detection
Delay Time
Short Circuit Detection Delay
Time
μs
VDD = 3.0V
10
50
Detect Rising Edge of “ Dout
”
−2.0
−1.3
−0.6
Charger Detection Voltage
V
Pin Voltage (when VD1<VDD
<
VD2)
Cout High Level Resistance
Cout Low Level Resistance
RCOH
RCOL
R DOH
VDD =3.5V; Cout =3.0V;VN=0V
VDD =4.5V;
1
2
10
kΩ
kΩ
kΩ
150
2.5
602
5.0
2,380
10.0
High Level Resistance
Dout
VDD =3.5V;
VDD =1.8V;
=3.0V;VN=0V
Dout
Dout Low Level Resistance
R DOL
2.5
5.0
10.0
kΩ
=0.5V;VN=1.8V
Dout
Internal Resistance between VN
and VDD
RVND
RVNG
VDD =1.8V; VN=0V
VDD =3.5V; VN=3.5V
100
50
300
150
900
300
kΩ
kΩ
Internal Resistance between VN
and GND
– 台灣類比科技股份有限公司 –
– Advanced Analog Technology, Inc. –
Page 4 of 25
V2.0