AP9972GS/P
f=1.0MHz
12
10000
1000
100
I D = 35 A
10
C iss
V DS =48V
V
V
DS =38V
DS =30V
8
6
4
2
0
C oss
C rss
0
20
40
60
1
5
9
13
17
21
25
29
Q G , Total Gate Charge (nC)
V DS , Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1000
1
Duty factor=0.5
0.2
0.1
100
10
1
100us
0.1
1ms
0.05
PDM
10ms
t
0.02
0.01
T
T C =25 o C
Duty factor = t/T
Single Pulse
Peak Tj = PDM x Rthjc + TC
100ms
DC
Single Pulse
0.01
0.00001
0.1
1
10
100
1000
0.0001
0.001
0.01
0.1
1
10
V DS , Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
100
80
60
40
20
0
VG
V DS =5V
T j =25 o C
T j =150 o C
QG
4.5V
QGD
QGS
Q
Charge
0
2
4
6
8
V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
4
A-POWER [ ADVANCED POWER ELECTRONICS CORP. ]
