AP9972GS/P
RoHS-compliant Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Low Gate Charge
BVDSS
RDS(ON)
ID
60V
18mΩ
60A
D
S
▼ Single Drive Requirement
▼ Surface Mount Package
G
Description
Advanced Power MOSFETs from APEC provide the designer with
the best combination of fast switching, ruggedized device design,
low on-resistance and cost-effectiveness.
G
D
S
TO-263(S)
TO-220(P)
The TO-263 package is widely preferred for all commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters. The through-hole version (AP9972GP)
are available for low-profile applications.
G
D
S
Absolute Maximum Ratings
Symbol
Parameter
Rating
60
Units
V
VDS
VGS
Drain-Source Voltage
Gate-Source Voltage
±25
60
V
Continuous Drain Current, VGS @ 10V
ID@TC=25℃
ID@TC=100℃
IDM
A
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current1
38
A
230
89
A
PD@TC=25℃
Total Power Dissipation
W
Linear Derating Factor
0.7
450
30
W/℃
mJ
A
EAS
IAR
Single Pulse Avalanche Energy3
Avalanche Current3
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
-55 to 150
-55 to 150
℃
℃
Thermal Data
Symbol
Parameter
Value
Units
℃/W
℃/W
Rthj-c
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient
1.4
62
Rthj-a
Data and specifications subject to change without notice
1
200803183
A-POWER [ ADVANCED POWER ELECTRONICS CORP. ]
