AP9972GS/P
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
BVDSS
Parameter
Test Conditions
VGS=0V, ID=250uA
Min. Typ. Max. Units
Drain-Source Breakdown Voltage
60
-
-
0.06
-
-
-
V
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA
Static Drain-Source On-Resistance2 VGS=10V, ID=35A
VGS=4.5V, ID=25A
V/℃
mΩ
RDS(ON)
-
18
-
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
22
mΩ
V
VGS(th)
gfs
Gate Threshold Voltage
VDS=VGS, ID=250uA
VDS=10V, ID=35A
VDS=60V, VGS=0V
VDS=48V ,VGS=0V
VGS=±25V
-
3
Forward Transconductance
55
-
-
S
IDSS
Drain-Source Leakage Current
Drain-Source Leakage Current (T=150oC)
uA
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Ω
10
-
25
j
IGSS
Qg
Gate-Source Leakage
Total Gate Charge2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
Rise Time
-
±100
ID=35A
32
8
51
-
Qgs
Qgd
td(on)
tr
VDS=48V
VGS=4.5V
20
11
58
45
80
-
VDS=30V
-
ID=35A
-
td(off)
tf
Turn-off Delay Time
Fall Time
RG=3.3Ω,VGS=10V
RD=0.86Ω
-
-
Ciss
Coss
Crss
Rg
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VGS=0V
3170 5070
VDS=25V
280
230
1.7
-
-
-
f=1.0MHz
f=1.0MHz
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
VSD
trr
Forward On Voltage2
Reverse Recovery Time2
IS=35A, VGS=0V
IS=35A, VGS=0V,
dI/dt=100A/µs
-
-
-
-
1.2
V
50
48
-
-
ns
nC
Qrr
Reverse Recovery Charge
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Starting Tj=25oC , VDD=30V , L=1mH , RG=25Ω , IAS=30A.
THIS PRODUCT IS AN ELECTROSTATIC SENSITIVE, PLEASE HANDLE WITH CAUTION.
THIS PRODUCT HAS BEEN QUALIFIED FOR CONSUMER MARKET. APPLICATIONS OR USES AS CRITERIAL COMPONENT IN LIFE SUPPORT
DEVICE OR SYSTEM ARE NOT AUTHORIZED.
2
A-POWER [ ADVANCED POWER ELECTRONICS CORP. ]
