AP2764AP-A
f=1.0MHz
C iss
16
10000
I D =7A
12
V
DS =480V
C oss
100
8
4
C rss
1
0
1
5
9
13
17
21
25
29
0
20
40
60
80
100
Q G , Total Gate Charge (nC)
V DS , Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1
100
10
1
Duty factor=0.5
0.2
0.1
0.1
100us
1ms
0.05
PDM
t
0.02
T
0.01
10ms
Duty factor = t/T
T c =25 o C
100ms
DC
Peak Tj = PDM x Rthjc + TC
Single Pulse
Single Pulse
0.01
0.1
0.00001
0.0001
0.001
0.01
0.1
1
1
10
100
1000
10000
V DS , Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
VG
VDS
90%
QG
10V
QGS
QGD
10%
VGS
td(off)
tr
td(on)
tf
Q
Charge
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
4