AP2764AP-A
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
BVDSS
RDS(ON)
VGS(th)
Parameter
Test Conditions
Min. Typ. Max. Units
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance3 VGS=10V, ID=3.2A
VGS=0V, ID=1mA
650
-
-
-
-
1.1
4
V
Ω
V
-
Gate Threshold Voltage
VDS=VGS, ID=250uA
VDS=10V, ID=4A
2
gfs
Forward Transconductance
-
-
-
-
-
-
-
-
-
-
-
-
-
-
8
-
-
S
IDSS
Drain-Source Leakage Current
Drain-Source Leakage Current (Tj=125oC) VDS=480V, VGS=0V
uA
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
VDS=480V, VGS=0V
25
-
500
IGSS
Gate-Source Leakage
Total Gate Charge
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
VGS=+30V, VDS=0V
ID=7A
-
+100
Qg
66
10
24
36
46
465
87
105
Qgs
Qgd
td(on)
tr
VDS=480V
VGS=10V
VDD=300V
ID=7A
-
-
-
-
-
-
td(off)
tf
Turn-off Delay Time
Fall Time
RG=50Ω
VGS=10V
VGS=0V
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
2730 4400
VDS=15V
f=1.0MHz
470
60
-
-
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
VSD
trr
Forward On Voltage3
IS=4A, VGS=0V
IS=7A, VGS=0V,
dI/dt=100A/µs
-
-
-
-
480
7
1.5
V
ns
µC
Reverse Recovery Time
Reverse Recovery Charge
-
-
Qrr
Notes:
1.Pulse width limited by max. junction temperature.
2.Starting Tj=25oC , VDD=50V , L=1mH , RG=25Ω
3.Pulse test
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
A-POWER [ ADVANCED POWER ELECTRONICS CORP. ]
