AP2764AP-A
14
12
10
8
8
6
4
2
0
T C =25 o C
T C =150 o C
10V
5.0V
10V
6.0V
4.5V
6
5.0V
4
V
G =4.0V
2
V G =4.0V
0
0
5
10
15
20
25
0
5
10
15
20
25
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1.2
1.1
1
3
2
1
0
I D =4A
V
G =10V
0.9
0.8
-50
0
50
100
150
-50
0
50
100
150
T j , Junction Temperature ( o C )
T
, Junction Temperature ( o C)
j
Fig 3. Normalized BVDSS v.s. Junction
Temperature
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
100
3.2
2.8
2.4
2
10
T j = 150 o
C
T j = 25 o
C
1
0.1
1.6
1.2
0.01
0.1
0.3
0.5
0.7
0.9
1.1
1.3
1.5
-50
0
50
100
150
T j , Junction Temperature ( o C)
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
A-POWER [ ADVANCED POWER ELECTRONICS CORP. ]
