AP2428GN3
10
1000
f=1.0MHz
Ciss
I
D
=5A
V
GS
, Gate to Source Voltage (V)
8
V
DS
=15V
V
DS
=20V
V
DS
=25V
6
C (pF)
100
Coss
Crss
4
2
0
0
10
20
30
10
1
5
9
13
17
21
25
29
Q
G
, Total Gate Charge (nC)
V
DS
, Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
1
DUTY=0.5
Normalized Thermal Response (R
thja
)
0.2
10
0.1
0.1
1ms
I
D
(A)
1
0.05
0.02
P
DM
t
T
Duty factor = t/T
Peak T
j
= P
DM
x R
thja
+ T
a
Rthja = 180℃/W
10ms
100ms
0.1
0.01
0.01
Single Pulse
T
A
=25 C
Single Pulse
o
1s
DC
0.01
0.1
1
10
100
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
V
DS
, Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
20
V
DS
=5V
T
j
=25 C
16
V
G
o
T
j
=150 C
o
I
D
, Drain Current (A)
Q
G
4.5V
12
Q
GS
8
Q
GD
4
Charge
0
Q
0
1
2
3
V
GS
, Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
4
A-POWER [ ADVANCED POWER ELECTRONICS CORP. ]
