AP2428GN3
RoHS-compliant Product
Advanced Power
Electronics Corp.
▼
Bottom Exposed DFN
▼
Low On-resistance
▼
Lower Profile
DFN3*3
G1
S1
D1
D1
D2
D2
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
BV
DSS
R
DS(ON)
S2
G2
30V
27mΩ
5.5A
I
D
D2
D1
D1
G1
G2
D2
S1
S2
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@T
A
=25℃
I
D
@T
A
=70℃
I
DM
P
D
@T
A
=25℃
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
3
Continuous Drain Current
Pulsed Drain Current
1
3
Rating
30
±10
5.5
4.4
20
1.25
0.01
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/℃
℃
℃
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-ambient
3
Value
100
Unit
℃/W
Data and specifications subject to change without notice
1
201120072
A-POWER [ ADVANCED POWER ELECTRONICS CORP. ]
