AP2428GN3
20
20
T
A
=25
o
C
16
5.0V
4.5V
4.0V
3.5V
V
G
=2.5V
16
T
A
=150 C
o
I
D
, Drain Current (A)
I
D
, Drain Current (A)
5.0V
4.5V
4.0V
3.5V
V
G
=2.5V
12
12
8
8
4
4
0
0
0.4
0.8
1.2
1.6
2
0
0
1
2
3
4
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
60
1.8
I
D
=3A
T
A
=25 C
50
I
D
=5A
1.6
o
V
G
=4.5V
Normalized R
DS(ON)
1.4
R
DS(ON)
(m
Ω
)
40
1.2
1.0
30
0.8
20
1
2
3
4
5
0.6
25
50
75
100
125
150
V
GS
, Gate-to-Source Voltage (V)
T
j
, Junction Temperature ( C)
o
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
32.0
8
6
T
j
=150
o
C
T
j
=25
o
C
R
DS(ON)
(mΩ)
30.0
28.0
V
GS
=2.5V
I
S
(A)
4
26.0
24.0
2
V
GS
=4.5V
22.0
0
0
0.4
0.8
1.2
1.6
20.0
0
4
8
12
16
20
V
SD
, Source-to-Drain Voltage (V)
I
D
, Drain Current (A)
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. On-Resistance vs.
Drain Current
3
A-POWER [ ADVANCED POWER ELECTRONICS CORP. ]
